Light emitting device, light emitting device package and lighting system including the same

• US 8,384,104 B2
• Filed: 03/09/2010
• Issued: 02/26/2013
• Est. Priority Date: 03/10/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Kim, Sun Kyung
• Primary Examiner(s): Dickey, Thomas L
• Assistant Examiner(s): Schoenholtz, Joseph
• Application Number:
  US12/720,013
• Publication Number:
  US 20100230701A1
• Time in Patent Office: 1,085 Days
• Field of Search: None
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0083 Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device, a light emitting device package and a lighting system including the same are provided. The light emitting device may include a light emitting structure, a dielectric pattern, a second electrode layer, and a resonator structure. The light emitting structure may include a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The dielectric pattern may be disposed on the second conductive type semiconductor layer. The second electrode layer may be disposed on the second conductive type comprising the dielectric pattern. The resonator structure may be disposed on the light emitting structure.

Claims

1. A light emitting device, comprising:

an electrode layer;

a plurality of dielectric patterns provided on the electrode layer;

a light emitting structure on the plurality of dielectric patterns and the electrode layer, wherein the light emitting structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer, which are vertically stacked on the plurality of dielectric patterns; and

a resonator structure on the light emitting structure, wherein the resonator structure comprises a recessed structure in the light emitting structure, wherein the recessed structure is not formed in the active layer, wherein the resonator structure comprises a plurality of cylindrical patterns in the light emitting structure, and wherein the plurality of dielectric patterns do not overlap with the plurality of cylindrical patterns of the resonator structure.

2. The light emitting device of claim 1, wherein the first semiconductor layer comprises a first conductive type semiconductor layer.

3. The light emitting device of claim 1, further comprising an insulation layer on a side surface of the recessed structure in the light emitting structure.

4. The light emitting device of claim 1, further comprising a roughness pattern or a periodic unevenness on the recessed structure in the light emitting structure.

5. The light emitting device of claim 1, further comprising a reflection layer on a side surface of the recessed structure in the light emitting structure.

7. A light emitting device (LED) package comprising:

an LED of claim 1 or 6; and

a package body containing the LED.

8. A lighting system comprising a light emitting module including a light emitting device (LED) package of claim 7.

9. The light emitting device of claim 1, wherein the recessed structure is formed in the first semiconductor layer.

10. The light emitting device according to claim 2, wherein the recessed structure has a horizontal width smaller than a thickness of the light emitting structure.

13. The light emitting device according to claim 1, wherein the resonator structure is formed in the first semiconductor layer, and wherein a vertical thickness of the plurality of cylindrical patterns is thicker than a vertical thickness of a remaining portion of the first semiconductor layer having the recess structure.

6. A light emitting device, comprising:

an electrode layer;

a plurality of dielectric patterns provided on the electrode layer;

a light emitting structure on the plurality of dielectric patterns and the electrode layer, wherein the light emitting structure comprises a first semiconductor layer, an active layer, and a second semiconductor layer, which are vertically stacked on the plurality of dielectric patterns; and

a resonator structure on the light emitting structure, wherein the resonator structure comprises a recessed structure in the light emitting structure, wherein the resonator structure comprises a plurality of hole patterns, which are formed in the light emitting structure, and wherein the recessed structure is not formed in the active layer, and wherein the plurality of dielectric patterns do not overlap with the plurality of hole patterns of the resonator structure.

11. The light emitting device of claim 6, wherein the recessed structure is formed in the first semiconductor layer.

12. The light emitting device according to claim 6, wherein at least one of the plurality of cylindrical patterns or the plurality of hole patterns has a horizontal width smaller than a thickness of the light emitting structure.

14. The light emitting device according to claim 6, wherein the resonator structure is formed in the first semiconductor layer, and wherein a vertical thickness of the plurality of hole patterns is thicker than a vertical thickness of a remaining portion of the first semiconductor layer having the recess structure.