Bond pad design for enhancing light extraction from LED chips
First Claim
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1. A light emitting diode (LED) chip device, comprising:
- a light emitting semiconductor structure;
at least one bond pad disposed on said semiconductor structure; and
wherein said semiconductor structure is shaped to define at least one trench proximate to an edge of said bond pad and substantially separating areas of said semiconductor structure beneath said bond pad from the rest of said semiconductor structure;
wherein each layer of said semiconductor structure beneath said bond pad is contiguous with a corresponding layer of the rest of said semiconductor structure, such that a connecting portion between said semiconductor structure beneath said bond pad and the rest of said semiconductor structure is narrower than the bond pad.
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Abstract
An improved bond pad design for increased light extraction efficiency for use in light emitting diodes (LEDs) and LED packages. Embodiments of the present invention incorporate a structure that physically isolates the bond pads from the primary emission surface, forcing the current to flow away from the bond pads first before traveling down into the semiconductor material toward the active region. This structure reduces the amount of light that is generated in the area near the bond pads, so that less of the generated light is trapped underneath the bond pads and absorbed.
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Citations
12 Claims
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1. A light emitting diode (LED) chip device, comprising:
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a light emitting semiconductor structure; at least one bond pad disposed on said semiconductor structure; and wherein said semiconductor structure is shaped to define at least one trench proximate to an edge of said bond pad and substantially separating areas of said semiconductor structure beneath said bond pad from the rest of said semiconductor structure; wherein each layer of said semiconductor structure beneath said bond pad is contiguous with a corresponding layer of the rest of said semiconductor structure, such that a connecting portion between said semiconductor structure beneath said bond pad and the rest of said semiconductor structure is narrower than the bond pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification