LED assembly having maximum metal support for laser lift-off of growth substrate

• US 8,384,118 B2
• Filed: 04/27/2010
• Issued: 02/26/2013
• Est. Priority Date: 06/09/2005
• Status: Active Grant

• Current Assignee: Lumileds LLC (Apollo Global Management, Inc.)
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: Schiaffino, Stefano, Steigerwald, Daniel A., Holcomb, Mari, Basin, Grigoriy, Martin, Paul, Epler, John
• Primary Examiner(s): SANDVIK, BENJAMIN P
• Application Number:
  US12/767,845
• Publication Number:
  US 20100207157A1
• Time in Patent Office: 1,036 Days
• Field of Search: None
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.

Claims

1. A light emitting diode (LED) structure comprising:

LED layers, forming an LED die, comprising an n-type layer, an active layer, and a p-type layer epitaxially grown over a growth substrate, the LED layers forming a substantially rectangular surface;

a first bonding metal on a back surface of the LED die electrically contacting at least one of the n-type layer and the p-type layer;

a second bonding metal on a submount generally corresponding to the first bonding metal, the first bonding metal being bonded to the second bonding metal, with substantially no gaps between the first bonding metal and the second bonding metal; and

a dielectric support structure formed on a bottom surface of the LED layers, facing the submount, prior to the first bonding metal being bonded to the second bonding metal, the support structure extending to at least two edges of the rectangular surface, such that at least portions of a perimeter of the rectangular surface are directly supported, in a direction normal to the rectangular surface along the perimeter, by the support structure, the second bonding metal, and the submount,

wherein there is no growth substrate attached to the LED die after the LED die is bonded to the submount, and wherein there is no dispensed underfill between the submount and the LED layers to support the LED layers.

2. The structure of claim 1 wherein at least 85% of the rectangular surface of the LED layers is directly supported by the first bonding metal, the second bonding metal, and the submount.

3. The structure of claim 1 wherein the support structure comprises a dielectric material formed by a photolithographic process.

4. The structure of claim 3 wherein the support structure comprises a photoresist.

5. The structure of claim 1 wherein the first bonding metal comprises:

a first metal portion electrically contacting the p-type layer, and a second metal portion electrically contacting the n-type layer.

6. The structure of claim 1 wherein the first bonding metal comprises:

a first metal portion electrically contacting the p-type layer, and a second metal portion electrically contacting the n-type layer.

7. The structure of claim 1 wherein the first bonding metal comprises:

a first metal portion electrically contacting the p-type layer, and a second metal portion electrically contacting the n-type layer, wherein the first metal portion and the second metal portion are separated for electrical insulation by a gap less than 50 microns.

8. The structure of claim 1 wherein the first bonding metal comprises:

a first metal portion electrically contacting the p-type layer, and a second metal portion electrically contacting the n-type layer, wherein the first bonding metal and the second bonding metal are substantially thermally matched so as to have uniform expansion behavior for limiting thermally induced stresses on the LED layers.

9. The structure of claim 1 wherein the first bonding metal comprises:

a first metal portion electrically contacting the p-type layer, and a second metal portion electrically contacting the n-type layer, and wherein the second metal portion forms a dot pattern, each dot contacting an area of the n-type layer.

10. The structure of claim 1 wherein the first bonding metal comprises a metal having a thickness exceeding 20 microns to provide support of the LED die during a growth substrate removal process.

11. The structure of claim 1 wherein the second bonding metal has gaps between anode and cathode portions that match gaps in a layout of the first bonding metal.

12. The structure of claim 1 wherein the second bonding metal has gaps between anode and cathode portions that are larger than gaps in a layout of the first bonding metal.

13. The structure of claim 1 wherein the first bonding metal comprises anode and cathode portions, and wherein the anode and cathode portions of the first bonding metal form interdigitated metal fingers.