MEMS device including an electrical interconnect through a substrate

• US 8,384,134 B2
• Filed: 04/25/2012
• Issued: 02/26/2013
• Est. Priority Date: 03/14/2011
• Status: Active Grant

• Current Assignee: Invensense Incorporated (TDK Corporation)
• Original Assignee: Invensense Incorporated (TDK Corporation)
• Inventors: Nasiri, Steven S., Lim, Martin, Daneman, Michael J.
• Primary Examiner(s): MITCHELL, JAMES M
• Application Number:
  US13/455,494
• Publication Number:
  US 20120235297A1
• Time in Patent Office: 307 Days
• Field of Search: 257/226, 257/415, 438/464
• US Class Current: 257/226
• CPC Class Codes: A45D 27/42 Shaving masks
• CPC Class Codes: B81C 1/00238 Joining a substrate with an electronic processing unit and a substrate with a micromechanical structure
• CPC Class Codes: B81C 2203/0792 Forming interconnections between the electronic processing unit and the micromechanical structure
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate

Abstract

A MEMS device is disclosed. The MEMS device comprises a MEMS substrate and a CMOS substrate having a front surface, a back surface and one or more metallization layers. The front surface being bonded to the MEMS substrate. The MEMS device includes one or more conductive features on the back surface of the CMOS substrate and electrical connections between the one or more metallization layers and the one or more conductive features.

Claims

1. A MEMS device comprising:

a MEMS substrate comprising a portion of a handle wafer bonded to a patterned electrically conductive device layer within a second wafer with an insulating layer positioned between the handle wafer and the second wafer;

a CMOS substrate having a front surface, a back surface and one or more metallization layers;

the front surface being bonded to the MEMS substrate;

one or more conductive features on the back surface of the CMOS substrate; and

electrical connections between the one or more metallization layers and the one or more conductive features.

2. The MEMS device of claim 1, wherein the conductive features are solder balls.

3. The MEMS device of claim 1, wherein the conductive features include a second conductive redistribution layer.

4. The MEMS device of claim 3, wherein a stress relief layer is formed beneath the second conductive redistribution layer.

5. The MEMS device of claim 3, wherein the conductive features are solder balls.

6. The MEMS device of claim 1, wherein the electrical connections comprise

one or more openings in the back-surface of the CMOS substrate exposing the one or more metallization layers;

a second insulating layer coating the sidewalls of the one or more openings in the back surface of the CMOS substrate; and

a conductive layer coating the insulating layer on the back surface of the CMOS substrate and on sidewalls of the one or more openings and providing physical and electrical contact to the one of more metallization layers.

7. The MEMS device of claim 1 further comprising

an opening penetrating completely through the handle wafer and the insulating layer, and exposing a device layer;

and

a second conductive layer deposited onto the MEMS substrate such that the second conductive layer at least partially covers the surface of the MEMS substrate and the sidewalls of the opening include making physical contact to the device layer, wherein the conductive layer is electrically connected to the device layer.

8. A MEMS device comprising:

a MEMS substrate, wherein the MEMS substrate includes a portion of a handle wafer bonded to a patterned electrically conductive device layer within a second wafer with an insulating layer positioned between the handle wafer and the second wafer;

an opening penetrating completely through the portion of the handle wafer and the insulating layer, and exposing the device layer; and

a conductive layer deposited onto the handle wafer such that the conductive layer at least partially covers the surface of the handle wafer and the sidewalls of the opening including making physical contact to the device layer thereby electrically connecting the conductive layer to the device layer.

9. The MEMS device of claim 8, wherein the opening has sloped sidewalls.

10. The MEMS device of claim 9, wherein a CMOS substrate is bonded to the MEMS substrate.

11. The MEMS device of claim 10, wherein one or more openings in the back-side of the CMOS substrate exposing one or more metal interconnection layer.

12. The MEMS device wafer of claim 11, wherein a second insulating layer coats the sloped sidewalls of the one or more openings in the back-side of the CMOS substrate.

13. The MEMS device wafer of claim 12, wherein a second conductive layer coats the insulating layer on the back-side of the CMOS substrate and on sidewalls of the one or more openings and provides physical and electrical contact to the one of more metal interconnection layers.

14. The MEMS device wafer of claim 13, wherein one or more solder-balls are connected to the second conductive layer.

15. A MEMS device comprising:

a MEMS substrate, wherein the MEMS substrate includes a top layer connected to an electrically conductive bottom layer;

an opening penetrating completely through the top layer, and exposing the bottom layer;

a second electrically conductive layer deposited onto the MEMS substrate such that the second electrically conductive layer at least partially covers the surface and the sidewalls of the opening including making physical contact to the bottom layer, wherein the second electrically conductive layer is electrically connected to the bottom layer; and

a CMOS substrate is bonded to the MEMS substrate; and

wherein one or more openings in the back-side of the CMOS substrate exposing one or more metal interconnection layer.

16. The MEMS device of claim 15, wherein the opening through the top layer has sloped sidewalls.

17. The MEMS device of claim 15 wherein a third electrically conductive layer coats the insulating layer on the back-side of the CMOS substrate and on sidewalls of the one or more openings and provides physical and electrical contact to the one of more metal interconnection layers.

18. The MEMS device wafer of claim 17, wherein one or more solder-balls are connected to the third conductive layer.