Semiconductor device and method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- a conductive layer;
a first layer over the conductive layer, the first layer including a first organic resin and a first fibrous body;
a second layer over the first layer;
a third layer over the second layer, the third layer including a second organic resin and a second fibrous body;
a fourth layer over the third layer; and
a semiconductor integrated circuit between the second layer and the third layer,wherein the second layer has a lower modulus of elasticity and higher breaking strength than the first layer, andwherein the fourth layer has a lower modulus of elasticity and higher breaking strength than the third layer.
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Accused Products
Abstract
To reduce defects of a semiconductor device, such as defects in shape and characteristic due to external stress and electrostatic discharge. To provide a highly reliable semiconductor device. In addition, to increase manufacturing yield of a semiconductor device by reducing the above defects in the manufacturing process. The semiconductor device includes a semiconductor integrated circuit sandwiched by impact resistance layers against external stress and an impact diffusion layer diffusing the impact and a conductive layer covering the semiconductor integrated circuit. With the use of the conductive layer covering the semiconductor integrated circuit, electrostatic breakdown (malfunctions of the circuit or damages of a semiconductor element) due to electrostatic discharge of the semiconductor integrated circuit can be prevented.
54 Citations
18 Claims
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1. A semiconductor device comprising:
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a conductive layer; a first layer over the conductive layer, the first layer including a first organic resin and a first fibrous body; a second layer over the first layer; a third layer over the second layer, the third layer including a second organic resin and a second fibrous body; a fourth layer over the third layer; and a semiconductor integrated circuit between the second layer and the third layer, wherein the second layer has a lower modulus of elasticity and higher breaking strength than the first layer, and wherein the fourth layer has a lower modulus of elasticity and higher breaking strength than the third layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a conductive layer; a first layer over the conductive layer; a second layer over the conductive layer, the second layer including a first fibrous body and a first organic resin; a third layer over the second layer, the third layer including a second fibrous body and a second organic resin; a fourth layer over the third layer; and a semiconductor integrated circuit between the second layer and the third layer, wherein the first layer has a lower modulus of elasticity and higher breaking strength than the second layer, and wherein the fourth layer has a lower modulus of elasticity and higher breaking strength than the third layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification