Semiconductor device
First Claim
1. A semiconductor device capable of input and output of information by using electromagnetic waves comprising:
- an antenna for receiving electric waves over a substrate; and
an integrated circuit over the substrate,wherein the integrated circuit comprises a battery capacitor, a rectifier circuit and a booster circuit,wherein the battery capacitor is configured to be charged according to electric waves received by the antenna, by using the rectifier circuit and the booster circuit,wherein the antenna includes a base layer and a copper plating layer over the base layer,wherein the base layer comprises a nitride film of an alloy, andwherein the alloy includes nickel and a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum.
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Abstract
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over one substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over one substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102, when a copper plating layer 108 is used for a conductor of the antenna 101, it is possible to decrease an adverse effect on electrical characteristics of circuit elements due to copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal.
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Citations
20 Claims
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1. A semiconductor device capable of input and output of information by using electromagnetic waves comprising:
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an antenna for receiving electric waves over a substrate; and an integrated circuit over the substrate, wherein the integrated circuit comprises a battery capacitor, a rectifier circuit and a booster circuit, wherein the battery capacitor is configured to be charged according to electric waves received by the antenna, by using the rectifier circuit and the booster circuit, wherein the antenna includes a base layer and a copper plating layer over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum. - View Dependent Claims (2, 3, 4, 5, 20)
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6. A semiconductor device capable of input and output of information by using electromagnetic waves comprising:
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a first antenna for receiving electric waves over a substrate; a second antenna over the substrate; and an integrated circuit over the substrate, wherein the integrated circuit comprises a battery capacitor, a rectifier circuit and a booster circuit, wherein the battery capacitor is configured to be charged according to electric waves received by the second antenna, wherein the first antenna and the second antenna include a base layer and a copper plating layer over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum. - View Dependent Claims (7, 8, 9, 10)
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11. A semiconductor device capable of input and output of information by using electromagnetic waves comprising:
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an antenna for receiving electric waves over a substrate; and an integrated circuit over the substrate, wherein the integrated circuit comprises a secondary battery, a rectifier circuit and a booster circuit, wherein the secondary battery is configured to be charged according to electric waves received by the antenna, by using the rectifier circuit and the booster circuit, wherein the antenna includes a base layer and a copper plating layer over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor device capable of input and output of information by using electromagnetic waves comprising:
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a first antenna for receiving electric waves over a substrate; a second antenna over the substrate; and an integrated circuit over the substrate, wherein the integrated circuit comprises a secondary battery, a rectifier circuit and a booster circuit, wherein the secondary battery is configured to be charged according to electric waves received by the second antenna, wherein the first antenna and the second antenna include a base layer and a copper plating layer over the base layer, wherein the base layer comprises a nitride film of an alloy, and wherein the alloy includes nickel and a metal selected from the group consisting of titanium, tantalum, tungsten and molybdenum. - View Dependent Claims (17, 18, 19)
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Specification