Defective pixel specifying method, defective pixel specifying system, image correcting method, and image correcting system

• US 8,385,682 B2
• Filed: 12/29/2011
• Issued: 02/26/2013
• Est. Priority Date: 03/01/2001
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kimura, Hajime
• Primary Examiner(s): STREGE, JOHN B
• Application Number:
  US13/339,694
• Publication Number:
  US 20120100890A1
• Time in Patent Office: 425 Days
• Field of Search: 382/275, 348/246, 345/173
• US Class Current: 382/275
• CPC Class Codes: H04N 9/30 using solid-state colour display devices

Abstract

A defective pixel specifying method and a defective pixel specifying system for a semiconductor device having a defective pixel are provided. Also provided are an image correcting method and an image correcting system for making a defective pixel inconspicuous on the screen when a read image is displayed. The present invention determines whether or not there is a defective pixel for each pixel and specifies the coordinate of the defective pixel using image signals obtained by reading a plurality of images. The image signal of the defective pixel is set based on the image signals of the pixels adjacent to the defective pixel to correct the image of the subject read.

Claims

1. An electronic device comprising:

a CMOS type image sensor;

a plurality of light emitting elements;

a circuit;

a shutter; and

operation keys,

wherein the CMOS type image sensor is formed on a single crystal substrate,

wherein the CMOS type image sensor comprises a pixel portion comprising a pixel,

wherein the pixel comprises a photoelectric conversion element, a first transistor, and a second transistor,

wherein the photoelectric conversion element is electrically connected to a gate of the first transistor,

wherein the gate of the first transistor is electrically connected to one of source and drain of the second transistor,

wherein the CMOS type image sensor is configured to obtain a first image through the photoelectric conversion element,

wherein the circuit is configured to calculate a histogram of the first image,

wherein the circuit is configured to calculate a variance of the first image,

wherein the circuit is configured to calculate a standard deviation of the first image,

wherein the circuit is configured to change the first image to a second image, and

wherein the plurality of light emitting elements are configured to display the second image.

5. The electronic device according to claim 1, wherein the electronic device is a camera.

9. The electronic device according to claim 1, wherein the electronic device is a cellular phone.

13. The electronic device according to claim 1, wherein the plurality of light emitting elements are provided in the pixel portion.

17. The electronic device according to claim 1, wherein the pixel portion includes a defective pixel.

21. The electronic device according to claim 17, wherein the first image is an image before correcting the defective pixel.

25. The electronic device according to claim 17, wherein the second image is an image after correcting the defective pixel.

29. The electronic device according to claim 1, wherein the second image is an image after a calibration.

33. The electronic device according to claim 1, wherein the first image is obtained by a calibration sheet.

2. An electronic device comprising:

a CMOS type image sensor;

a plurality of light emitting elements;

a circuit;

a shutter;

operation keys; and

a touch panel,

wherein the CMOS type image sensor is formed on a single crystal substrate,

wherein the CMOS type image sensor comprises a pixel portion comprising a pixel,

wherein the pixel comprises a photoelectric conversion element, a first transistor, and a second transistor,

wherein the photoelectric conversion element is electrically connected to a gate of the first transistor,

wherein the gate of the first transistor is electrically connected to one of source and drain of the second transistor,

wherein the CMOS type image sensor is configured to obtain a first image through the photoelectric conversion element,

wherein the circuit is configured to calculate a histogram of the first image,

wherein the circuit is configured to calculate a variance of the first image,

wherein the circuit is configured to calculate a standard deviation of the first image,

wherein the circuit is configured to change the first image to a second image, and

wherein the plurality of light emitting elements are configured to display the second image.

6. The electronic device according to claim 2, wherein the electronic device is a camera.

10. The electronic device according to claim 2, wherein the electronic device is a cellular phone.

14. The electronic device according to claim 2, wherein the plurality of light emitting elements are provided in the pixel portion.

18. The electronic device according to claim 2, wherein the pixel portion includes a defective pixel.

22. The electronic device according to claim 18, wherein the first image is an image before correcting the defective pixel.

26. The electronic device according to claim 18, wherein the second image is an image after correcting the defective pixel.

30. The electronic device according to claim 2, wherein the second image is an image after a calibration.

34. The electronic device according to claim 2, wherein the first image is obtained by a calibration sheet.

3. An electronic device comprising:

a CMOS type image sensor;

a plurality of light emitting elements;

a plurality of third transistors;

a circuit;

a shutter; and

operation keys,

wherein the CMOS type image sensor is formed on a single crystal substrate,

wherein the CMOS type image sensor comprises a pixel portion comprising a pixel,

wherein the pixel comprises a photoelectric conversion element, a first transistor, a second transistor,

wherein the photoelectric conversion element is electrically connected to a gate of the first transistor,

wherein the gate of the first transistor is electrically connected to one of source and drain of the second transistor,

wherein the CMOS type image sensor is configured to obtain a first image through the photoelectric conversion element,

wherein the circuit is configured to calculate a histogram of the first image,

wherein the circuit is configured to calculate a variance of the first image,

wherein the circuit is configured to calculate a standard deviation of the first image,

wherein the circuit is configured to change the first image to a second image,

wherein the plurality of light emitting elements are configured to display the second image, and

wherein the plurality of light emitting elements are electrically connected to the plurality of third transistors, respectively.

7. The electronic device according to claim 3, wherein the electronic device is a camera.

11. The electronic device according to claim 3, wherein the electronic device is a cellular phone.

15. The electronic device according to claim 3, wherein the plurality of light emitting elements are provided in the pixel portion.

19. The electronic device according to claim 3, wherein the pixel portion includes a defective pixel.

23. The electronic device according to claim 19, wherein the first image is an image before correcting the defective pixel.

27. The electronic device according to claim 19, wherein the second image is an image after correcting the defective pixel.

31. The electronic device according to claim 3, wherein the second image is an image after a calibration.

35. The electronic device according to claim 3, wherein the first image is obtained by a calibration sheet.

4. An electronic device comprising:

a CMOS type image sensor;

a plurality of light emitting elements;

a plurality of third transistors;

a circuit;

a shutter; and

operation keys,

wherein the CMOS type image sensor is formed on a single crystal substrate,

wherein the CMOS type image sensor comprises a pixel portion comprising a pixel,

wherein the pixel comprises a photoelectric conversion element, a first transistor, a second transistor,

wherein the photoelectric conversion element is electrically connected to a gate of the first transistor,

wherein the gate of the first transistor is electrically connected to one of source and drain of the second transistor,

wherein the CMOS type image sensor is configured to obtain a first image through the photoelectric conversion element,

wherein the circuit is configured to calculate a histogram of the first image,

wherein the circuit is configured to calculate a variance of the first image,

wherein the circuit is configured to calculate a standard deviation of the first image,

wherein the circuit is configured to change the first image to a second image,

wherein the plurality of light emitting elements are configured to display the second image, and

wherein the plurality of light emitting elements are electrically connected to the plurality of third transistors, respectively.

8. The electronic device according to claim 4, wherein the electronic device is a camera.

12. The electronic device according to claim 4, wherein the electronic device is a cellular phone.

16. The electronic device according to claim 4, wherein the plurality of light emitting elements are provided in the pixel portion.

20. The electronic device according to claim 4, wherein the pixel portion includes a defective pixel.

24. The electronic device according to claim 20, wherein the first image is an image before correcting the defective pixel.

28. The electronic device according to claim 20, wherein the second image is an image after correcting the defective pixel.

32. The electronic device according to claim 4, wherein the second image is an image after a calibration.

36. The electronic device according to claim 4, wherein the first image is obtained by a calibration sheet.