Method for manufacturing oxide thin film transistor and method for manufacturing display device

• US 8,389,310 B2
• Filed: 02/03/2010
• Issued: 03/05/2013
• Est. Priority Date: 12/28/2009
• Status: Active Grant

• Current Assignee: E Ink Holdings Incorporated
• Original Assignee: E Ink Holdings Incorporated
• Inventors: Shinn, Ted-Hong, Wang, Henry, Shu, Fang-An, Tsai, Yao-Chou
• Primary Examiner(s): Chang, Leonard
• Application Number:
  US12/699,063
• Publication Number:
  US 20110159618A1
• Time in Patent Office: 1,126 Days
• Field of Search: 438/30, 438/99, 438/149, 257/E33.019, 257/E21.476
• US Class Current: 438/30
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02617 Deposition types
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

Claims

1. A method for manufacturing an oxide semiconductor active layer to reduce leakage currents to less than 10 ⁻

14 A, increase electron mobility to 2 cm²/V sec and stabilize temperature stability thereof, comprising;

forming the oxide semiconductor active layer with a thickness in a range from 660 angstroms to 2000 angstroms by a deposition process, and in the deposition process, a total flow rate of a gas being more than 100 standard cubic centimeters per minute and an electric power being in a range from 1.5 kilowatts to 10 kilowatts, the gas in the deposition process comprises an oxygen with a flow ratio to the total gas in a range from 4% to 20%.

2. The method for manufacturing the oxide semiconductor active layer as claimed in claim 1, wherein the deposition process is a sputtering deposition process.

3. The method for manufacturing the oxide semiconductor active layer as claimed in claim 1, wherein material of the oxide semiconductor active layer is selected from the group consisting of zinc oxide, zinc tin oxide, chromium tin oxide, gallium tin oxide, titanium tin oxide, indium gallium zinc oxide, copper aluminum oxide, strontium copper oxide, lanthanum copper oxysulfide and any combination thereof.

4. The method for manufacturing the oxide semiconductor active layer as claimed in claim 1, wherein the gas in the deposition process further comprises argon.

5. A method for manufacturing a display device, comprising:

providing a substrate;

forming an oxide thin film transistor array for reducing leakage currents to less than 10 <sup>−

14</sup> A, increasing electron mobility to 2 cm²/V sec and stabilizing temperature stability thereof on the substrate including the steps of;

forming an oxide semiconductor active layer with a thickness in a range from 660 angstroms to 2000 angstroms by a deposition process, and in the deposition process, a total flow rate of a gas being more than 100 standard cubic centimeters per minute and an electric power being in a range from 1.5 kilowatts to 10 kilowatts, the gas in the deposition process comprises an oxygen with a flow ratio to the total gas in a range from 4% to 20%; and

disposing a display layer on the oxide thin film transistor array.

6. The method for manufacturing the display device as claimed in claim 5, wherein material of the oxide semiconductor active layer is selected from the group consisting of zinc oxide, zinc tin oxide, chromium tin oxide, gallium tin oxide, titanium tin oxide, indium gallium zinc oxide, copper aluminum oxide, strontium copper oxide, lanthanum copper oxysulfide and any combination thereof.

7. The method for manufacturing the display device as claimed in claim 5, wherein the gas in the deposition process further comprises argon.

8. The method for manufacturing the display device as claimed in claim 5, further comprising disposing a color filter on the display layer.

9. The method for manufacturing the display device as claimed in claim 5, wherein the display layer is an electrophoretic display layer.

10. The method for manufacturing the display device as claimed in claim 9, wherein the electrophoretic display layer is a microcapsule electrophoretic display layer or a microcup electrophoretic display layer.

11. The method for manufacturing the display device as claimed in claim 5, wherein the display layer is an organic light emitting diode display layer.

12. The method for manufacturing the display device as claimed in claim 11, wherein the organic light emitting diode display layer is bottom-emitting or top-emitting.

13. The method for manufacturing the display device as claimed in claim 5, wherein the display layer is a liquid crystal display layer.

14. The method for manufacturing the display device as claimed in claim 13, wherein a cell gap of the liquid crystal display layer is in a range from 3 micrometers to 6 micrometers.