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Method for manufacturing oxide thin film transistor and method for manufacturing display device

  • US 8,389,310 B2
  • Filed: 02/03/2010
  • Issued: 03/05/2013
  • Est. Priority Date: 12/28/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing an oxide semiconductor active layer to reduce leakage currents to less than 10

  • 14 A, increase electron mobility to 2 cm2/V sec and stabilize temperature stability thereof, comprising;

    forming the oxide semiconductor active layer with a thickness in a range from 660 angstroms to 2000 angstroms by a deposition process, and in the deposition process, a total flow rate of a gas being more than 100 standard cubic centimeters per minute and an electric power being in a range from 1.5 kilowatts to 10 kilowatts, the gas in the deposition process comprises an oxygen with a flow ratio to the total gas in a range from 4% to 20%.

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