Strain bars in stressed layers of MOS devices
First Claim
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1. A method of forming a semiconductor structure, the method comprising:
- forming an isolation region in a semiconductor substrate, wherein the isolation region adjoins an active region in the semiconductor substrate;
forming a metal-oxide-semiconductor (MOS) device comprising;
forming a gate electrode over the active region; and
forming a source region and a drain on opposing sides of the gate electrode;
forming a stressor layer over the active region and the isolation region; and
forming a strain bar overlaying the isolation region, wherein the strain bar is encircled by the stressor layer, wherein the steps of forming the stressor layer and the strain bar comprise;
blanket forming a dummy stressor layer having an opposite stress type than the stressor layer;
etching the dummy stressor layer to leave the strain bar;
forming the stressor layer over the strain bar and the MOS device; and
etching a portion of the stressor layer directly over the strain bar.
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Abstract
A semiconductor structure includes an active region; a gate strip overlying the active region; and a metal-oxide-semiconductor (MOS) device. A portion of the gate strip forms a gate of the MOS device. A portion of the active region forms a source/drain region of the MOS device. The semiconductor structure further includes a stressor region over the MOS device; and a stressor-free region inside the stressor region and outside the region over the active region.
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Citations
11 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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forming an isolation region in a semiconductor substrate, wherein the isolation region adjoins an active region in the semiconductor substrate; forming a metal-oxide-semiconductor (MOS) device comprising; forming a gate electrode over the active region; and forming a source region and a drain on opposing sides of the gate electrode; forming a stressor layer over the active region and the isolation region; and forming a strain bar overlaying the isolation region, wherein the strain bar is encircled by the stressor layer, wherein the steps of forming the stressor layer and the strain bar comprise; blanket forming a dummy stressor layer having an opposite stress type than the stressor layer; etching the dummy stressor layer to leave the strain bar; forming the stressor layer over the strain bar and the MOS device; and etching a portion of the stressor layer directly over the strain bar.
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2. A method of forming a semiconductor structure, the method comprising:
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providing a semiconductor substrate comprising an active region therein; providing an isolation region in the semiconductor substrate and adjoining the active region; forming a metal-oxide-semiconductor (MOS) device comprising; forming a gate electrode over the active region; and forming a source region and a drain region on opposing sides of the gate electrode; forming a stressor layer over the active region and the isolation region; and forming a strain bar overlying the isolation region, wherein the strain bar is encircled by the stressor layer, and wherein the step of forming the strain bar comprises; forming an opening in the stressor layer and overlying the isolation region; and filling the opening to form the strain bar. - View Dependent Claims (3, 4, 5, 6)
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7. A method of forming a semiconductor structure, the method comprising:
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providing a semiconductor substrate comprising an active region therein; providing a shallow trench isolation (STI) region in the semiconductor substrate and adjoining the active region; forming a metal-oxide-semiconductor (MOS) device comprising; forming a gate electrode over the active region; and forming a source region and a drain region on opposing sides of the gate electrode; forming a contact etch stop layer (CESL) over the active region and the STI region; forming an opening in the CESL and directly overlying the STI region; and filling the opening to form a strain bar. - View Dependent Claims (8, 9, 10, 11)
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Specification