Semiconductor material manufacture
First Claim
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1. A method comprising:
- strengthening a bonding of a semiconductor layer to a bulk region of a product wafer by irradiating an interface region with electromagnetic radiation, the interface region disposed between the bonded semiconductor layer and the bulk region, the interface region having modifiers, the modifiers being different from bulk material of the product wafer, the electromagnetic radiation tuned to a frequency correlated to absorption by the modifiers.
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Abstract
Electronic apparatus, systems, and methods include a semiconductor layer bonded to a bulk region of a wafer or a substrate, in which the semiconductor layer can be bonded to the bulk region using electromagnetic radiation. Additional apparatus, systems, and methods are disclosed.
382 Citations
16 Claims
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1. A method comprising:
strengthening a bonding of a semiconductor layer to a bulk region of a product wafer by irradiating an interface region with electromagnetic radiation, the interface region disposed between the bonded semiconductor layer and the bulk region, the interface region having modifiers, the modifiers being different from bulk material of the product wafer, the electromagnetic radiation tuned to a frequency correlated to absorption by the modifiers. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
strengthening a bonding of a silicon layer to a silicon product wafer by irradiating an interface region with microwaves, the interface region disposed between a bulk silicon region of the silicon product wafer and the silicon layer, the interface region having modifiers, the modifiers being a material different from silicon, the microwaves tuned to a frequency correlated to absorption by the modifiers. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16)
Specification