Epitaxial solid-state semiconducting heterostructures and method for making same

• US 8,389,995 B2
• Filed: 09/17/2008
• Issued: 03/05/2013
• Est. Priority Date: 09/18/2007
• Status: Expired due to Fees

• Current Assignee: Centre National De La Recherche Scientifique
• Original Assignee: Centre National De La Recherche Scientifique
• Inventors: Largeau, Ludovic, Patriarche, Gilles, Regreny, Philippe, Hollinger, Guy, Saint-Girons, Guillaume
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US12/678,548
• Publication Number:
  US 20100289063A1
• Time in Patent Office: 1,630 Days
• Field of Search: 257 67- 69, 257/505, 257/507, 257347-354, 257/E21.193, 257/E29.286, 257/E29.292, 257/E31.045, 257/E31.046, 438/149, 438152-156, 438/164, 438/282, 438/298, 438/309, 438/311, 438/412, 438/479, 438/517, 438/910
• US Class Current: 257/67
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides

Abstract

A method for producing a solid-state semiconducting structure, includes steps in which:

• • (i) a monocrystalline substrate is provided;
  • (ii) a monocrystalline oxide layer is formed, by epitaxial growth, on the substrate;
  • (iii) a bonding layer is formed by steps in which:
    • (a) the impurities are removed from the surface of the monocrystalline oxide layer;
    • (b) a semiconducting bonding layer is deposited by slow epitaxial growth; and
  • (iv) a monocrystalline semiconducting layer is formed, by epitaxial growth, on the bonding layer so formed. The solid-state semiconducting heterostructures so obtained are also described.

Claims

1. A method for producing a wholly crystalline solid-state semiconducting structure, comprising:

(i) providing a monocrystalline substrate;

(ii) forming a monocrystalline oxide layer, by epitaxial growth, on said substrate;

(iii) forming a bonding layer by steps in which;

(a) removing impurities from a surface of the monocrystalline oxide layer;

(b) depositing a semiconducting bonding layer by slow epitaxial growth; and

(iv) forming a monocrystalline semiconducting layer, by epitaxial growth, on the bonding layer.

2. The method according to claim 1, further comprising a step of reconstructing the surface on an atomic scale.

3. The method according to claim 2, in which the step of reconstructing the surface is carried out during step (iii)(a).

4. The method according to claim 1, in which step (iii)(a) is carried out by treating with an oxidizing compound selected from the group consisting of oxygen, ozone and atomic oxygen.

5. The method according to claim 1, in which, in step (iii)(b), the bonding layer is formed by epitaxy of the semiconductor at a rate of from 0.1 to 0.5 monolayer/s.

6. The method according to claim 1, in which, in step (iii)(b), the bonding layer is formed by epitaxy of the semiconductor at a substrate temperature of from 250 to 500°

C., depending on the semiconductor in question, under conditions which are not favorable to surface migration.

7. The method according to claim 1, in which the substrate is silicon with an orientation of (100), (110), (111) or (001).

8. The method according to claim 1, in which the oxide formed in step (ii) is SrTiO₃ or Gd₂O₃.

9. The method according to claim 1, in which the semiconducting layer formed in step (iv) is composed substantially of a III-V compound or of Ge.

10. The method according to claim 1, in which the semiconducting layer formed in step (iv) is composed substantially of a binary or ternary III-V compound.

11. The method according to claim 1, in which the semiconducting layer formed in step (iv) is composed substantially of a III-V compound selected from the group consisting of GaAs, InP and InAs.

12. The method according to claim 1, in which the semiconducting layer formed in step (iv) is composed substantially of InP.

16. The method according to claim 1, wherein the monocrystalline oxide layer is formed from (Ba,Sr)TiO₃, LaAlO₃, La₂O₃, Pr₂O₃, Gd₂O₃, Nd₂O₃, Y₂O₃, BaO, SrO, CeO₂ or Al₂O₃.

13. A solid-state wholly crystalline semiconducting heterostructure comprising:

a monocrystalline substrate;

a monocrystalline oxide layer deposited directly on said substrate; and

a monocrystalline semiconducting layer deposited on the oxide layer,

in which the monocrystalline semiconducting layer has a dislocation density below 10⁵ cm<sup>−

2</sup>.

14. The semiconducting heterostructure according to claim 13, further comprising nanocrystallites.

15. The semiconducting heterostructure according to claim 13, in which the monocrystalline semiconducting layer is composed of InP.

17. The semiconducting heterostructure according to claim 13, wherein the monocrystalline oxide layer is formed from (Ba,Sr)TiO₃, LaAlO₃, La₂O₃, Pr₂O₃, Gd₂O₃, Nd₂O₃, Y₂O₃, BaO, SrO, CeO₂ or Al₂O₃.

18. A solid-state wholly crystalline semiconducting heterostructure comprising:

a monocrystalline Si substrate with an orientation of (100), (110), (111) or (001);

a monocrystalline oxide layer deposited directly on said substrate, the monocrystalline oxide layer being formed from (Ba,Sr)TiO₃, LaAlO₃, La₂O₃, Pr₂O₃, Gd₂O₃, Nd₂O₃, Y₂O₃, BaO, SrO, CeO₂ or Al₂O₃; and

a monocrystalline semiconducting layer deposited on the oxide layer,

in which the monocrystalline semiconducting layer has a dislocation density below 10⁵ cm<sup>−

2</sup>.

19. The semiconducting heterostructure according to claim 18, wherein the Si substrate and monocrystalline oxide layer are Gd₂O₃/Si(111).

20. The semiconducting heterostructure according to claim 18, wherein the Si substrate and monocrystalline oxide layer are SrTiO₃/Si(001).