Light emitting device and method of manufacturing the same

• US 8,390,002 B2
• Filed: 10/15/2008
• Issued: 03/05/2013
• Est. Priority Date: 06/19/2008
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Optodevice Company Limited (Seoul Semiconductor Co., Ltd.)
• Inventors: Kim, Chang Yeon, Yoon, Yeo Jin
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US12/251,735
• Publication Number:
  US 20090315063A1
• Time in Patent Office: 1,602 Days
• Field of Search: 257/79, 257/99, 257/94
• US Class Current: 257/79
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction

Abstract

There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.

Claims

1. A light emitting device, comprising:

a substrate;

an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, sequentially formed on the substrate;

trenches formed in the P-type semiconductor layer and the active layer, so as to expose the N-type semiconductor layer;

a first insulating layer formed on sidewalls of the trenches;

a conductive layer disposed within the trenches, so as to be on the first insulating layer and in direct contact with the N-type semiconductor layer;

a transparent electrode formed on the P-type semiconductor layer; and

a second insulating layer formed between the conductive layer and the transparent electrode, the second insulating layer configured to prevent the transparent electrode from directly contacting the conductive layer.

2. The light emitting device as claimed in claim 1, further comprising:

a first electrode electrically connected to the conductive layer and formed on the N-type semiconductor layer; and

a second electrode formed on the transparent electrode.

3. The light emitting device as claimed in claim 2, wherein the transparent electrode comprises an opening that exposes a portion of the P-type semiconductor layer, and the second electrode contacts the exposed portion of the P-type semiconductor layer.

4. The light emitting device as claimed in claim 2, wherein the trenches form a mesh structure.

5. The light emitting device as claimed in claim 1, wherein the minimum distance between the trenches is greater than the width of the trenches.

6. The light emitting device as claimed in claim 1, wherein surfaces of the conductive layer directly face the sidewalls of the trenches.

7. The light emitting device as claimed in claim 1, wherein the second insulating layer is coplanar with the upper surface of the P-type semiconductor layer.