Non-linear element, display device including non-linear element, and electronic device including display device
First Claim
1. A non-linear element comprising:
- a source electrode;
an oxide semiconductor layer adjacent to the source electrode;
a drain electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer is interposed between the source electrode and the drain electrode so that a current flows through the oxide semiconductor layer in a thickness direction thereof;
a gate insulating layer over the source electrode, the oxide semiconductor layer, and the drain electrode; and
a plurality of gate electrodes adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween, the plurality of gate electrodes being in contact with the gate insulating layer,wherein the plurality of gate electrodes are electrically connected to the drain electrode; and
wherein an area of contact between the source electrode and the oxide semiconductor layer is different from an area of contact between the drain electrode and the oxide semiconductor layer.
1 Assignment
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Accused Products
Abstract
A non-linear element (such as a diode) which includes an oxide semiconductor and has a favorable rectification property is provided. In a transistor including an oxide semiconductor in which the hydrogen concentration is 5×1019/cm3 or lower, a work function φms of a source electrode in contact with the oxide semiconductor, a work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd, and an area of contact between the drain electrode and the oxide semiconductor is larger than an area of contact between the source electrode and the oxide semiconductor. By electrically connecting a gate electrode and the drain electrode in the transistor, a non-linear element having a favorable rectification property can be achieved.
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Citations
33 Claims
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1. A non-linear element comprising:
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a source electrode; an oxide semiconductor layer adjacent to the source electrode; a drain electrode adjacent to the oxide semiconductor layer, wherein the oxide semiconductor layer is interposed between the source electrode and the drain electrode so that a current flows through the oxide semiconductor layer in a thickness direction thereof; a gate insulating layer over the source electrode, the oxide semiconductor layer, and the drain electrode; and a plurality of gate electrodes adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween, the plurality of gate electrodes being in contact with the gate insulating layer, wherein the plurality of gate electrodes are electrically connected to the drain electrode; and wherein an area of contact between the source electrode and the oxide semiconductor layer is different from an area of contact between the drain electrode and the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A non-linear element comprising:
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a first electrode; an oxide semiconductor layer on and in contact with the first electrode; a second electrode on and in contact with the oxide semiconductor layer; a gate insulating layer over the first electrode, the oxide semiconductor layer, and the second electrode; and a plurality of third electrodes adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween, the plurality of third electrodes being in contact with the gate insulating layer, wherein the plurality of third electrodes are electrically connected to one of the first electrode and the second electrode; wherein one of the first electrode and the second electrode, which is electrically connected to the plurality of third electrodes, has a work function φ
md, the other of the first electrode and the second electrode, which is not electrically connected to the plurality of third electrodes, has a work function φ
ms, and the oxide semiconductor layer has an electron affinity χ
,wherein the work function φ
md, the work function φ
ms and the electron affinity χ
satisfy φ
ms≦
χ
<
φ
md, andwherein a first area of contact between the oxide semiconductor layer and the one of the first electrode and the second electrode is different from a second area of contact between the oxide semiconductor layer and the other of the first electrode and the second electrode. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A non-linear element comprising:
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a first electrode; an oxide semiconductor layer on and in contact with the first electrode; a second electrode on and in contact with the oxide semiconductor layer; a gate insulating layer over the first electrode, the oxide semiconductor layer, and the second electrode; and a third electrode adjacent to the oxide semiconductor layer with the gate insulating layer interposed therebetween, the third electrode being in contact with the gate insulating layer, wherein the third electrode is connected to one of the first electrode and the second electrode; and wherein a first area of contact between the oxide semiconductor layer and the one of the first electrode and the second electrode is different from a second area of contact between the oxide semiconductor layer and the other of the first electrode and the second electrode. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification