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Power semiconductor devices, structures, and related methods

  • US 8,390,060 B2
  • Filed: 07/05/2011
  • Issued: 03/05/2013
  • Est. Priority Date: 07/06/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first-conductivity-type semiconductor source region;

    a second-conductivity-type semiconductor body region;

    a gate electrode, which is capacitively coupled to invert a portion of said body region, to thereby create a channel;

    a semiconductor drift region which includes both first-conductivity-type and second-conductivity-type semiconductor portions in parallel;

    immobile electrostatic charge which is capacitively coupled to invert parts of said second-conductivity-type drift region portions; and

    a first-conductivity-type semiconductor drain region;

    wherein said body region is interposed between said source region and said drift region;

    and wherein said drift region is interposed between said body region and said drain region;

    and further comprising an intermediate layer which has a first conductivity type, and has a higher doping than said first-conductivity-type semiconductor portion, and which electrically connects said channel both laterally and vertically to both said first-conductivity-type and said second-conductivity-type semiconductor portions, and which is physically interposed between said channel and both said first-conductivity-type and said second-conductivity-type semiconductor portions;

    whereby, in the ON state, majority carriers flow both through said first-conductivity-type portions, and at least some parts of said second-conductivity-type portions of said drift region, in parallel.

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