Electrostatic discharge protection device and electrostatic discharge protection circuit thereof

• US 8,390,070 B2
• Filed: 04/06/2011
• Issued: 03/05/2013
• Est. Priority Date: 04/06/2011
• Status: Active Grant

• Current Assignee: Nanya Technology Corporation
• Original Assignee: Nanya Technology Corporation
• Inventors: Chen, Wei-Fan
• Primary Examiner(s): Weiss, Howard
• Assistant Examiner(s): Rao, Steven
• Application Number:
  US13/080,662
• Publication Number:
  US 20120256229A1
• Time in Patent Office: 699 Days
• Field of Search: 257/360, 257/141, 257/162, 257/173, 257/350, 361/56, 361/100
• US Class Current: 257/360
• CPC Class Codes: H01L 27/0262 including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
• CPC Class Codes: H01L 29/7436 Lateral thyristors
• CPC Class Codes: H01L 29/87 Thyristor diodes, e.g. Shockley diodes, break-over diodes

Abstract

The ESD protection device includes a substrate, a well, a first doped region and a second doped region. The substrate has a first conductive type, and the substrate is electrically connected to a first power node. The well has a second conductive type, and is disposed in the substrate. The first doped region has the first conductive type, and is disposed in the well. The first doped region and the well are electrically connected to a second power node. The second doped region has the second conductive type, and is disposed in the substrate. The second doped region is in a floating state.

Claims

1. An electrostatic discharge (ESD) protection device, comprising:

a substrate, having a first conductive type, and the substrate being electrically connected to a first power node;

a well, having a second conductive type and disposed in the substrate;

a first doped region, having the first conductive type and disposed in the well, and the first doped region and the well being electrically connected to a second power node; and

a second doped region, having the second conductive type and disposed in the substrate; and

the second doped region being in a floating state and being spaced apart from the well.

2. The ESD protection device according to claim 1, further comprising an insulating layer, covering the second doped region.

3. The ESD protection device according to claim 1, further comprising a third doped region, having the first conductive type and disposed in the substrate, and the substrate being electrically connected to the first power node through the third doped region.

4. The ESD protection device according to claim 3, wherein the second doped region is disposed between the first doped region and the third doped region.

5. The ESD protection device according to claim 1, further comprising a fourth doped region, having the second conductive type and disposed in the well, and the well being electrically connected to the second power node through the fourth doped region.

6. The ESD protection device according to claim 5, wherein the first doped region is disposed between the second doped region and the fourth doped region.

7. The ESD protection device according to claim 1, further comprising a fifth doped region, disposed across a junction between the substrate and the well.

8. The ESD protection device according to claim 7, further comprising a gate insulating layer disposed on the substrate between the fifth doped region and the second doped region, and a control gate disposed on the gate insulating layer and electrically connected to the first power node.

9. The ESD protection device according to claim 7 further comprising a sixth doped region, disposed in the substrate and in contact with the fifth doped region, wherein the fifth doped region has the second conductive type, and the sixth doped region has the first conductive type.

10. The ESD protection device according to claim 1, further comprising a seventh doped region, disposed in the substrate between the first doped region and the second doped region and used as a trigger node to accept a trigger current.

11. An ESD protection circuit, comprising:

a first BJT, having a first type and having a first base, a first emitter and a first collector, wherein the first emitter is electrically connected to the second power node;

a second BJT, having a second type different from the first type and having a second base, a second emitter and a second collector, wherein the second collector is electrically connected to the first base, and the second base is electrically connected to the first collector; and

a diode, having an anode and a cathode, wherein the anode is electrically connected to the second emitter, and the cathode is electrically connected to the first power node.

12. The ESD protection circuit according to claim 11, further comprising a first resistor electrically connected between the first base and the second power node, and a second resistor electrically connected between the second base and the first power node.