Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate;
a first wiring layer formed over the substrate;
a first wiring formed in the first wiring layer;
a second wiring layer located above the first wiring layer;
a second wiring formed in the second wiring layer;
a wiring via for connecting the first wiring and the second wiring; and
a switch via for connecting the first wiring and the second wiring,wherein the switch via comprises at a bottom thereof a resistance change layer,wherein the wiring via and the second wiring comprise a barrier metal,wherein the wiring via and the second wiring comprises a region which electrically connects the wiring via with the second wiring without the barrier metal, andwherein the switch via and the second wiring are further electrically connected through the barrier metal.
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Abstract
Provided is a semiconductor device including a substrate, and a first wiring layer, a second wiring layer, and a switch via formed on the substrate. The first wiring layer has first wiring formed therein and the second wiring layer has second wiring formed therein. The switch via connects the first wiring and the second wiring. The switch via includes at least at its bottom a switch element including a resistance change layer. A resistance value of the resistance change layer changes according to a history of an electric field applied thereto.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate; a first wiring layer formed over the substrate; a first wiring formed in the first wiring layer; a second wiring layer located above the first wiring layer; a second wiring formed in the second wiring layer; a wiring via for connecting the first wiring and the second wiring; and a switch via for connecting the first wiring and the second wiring, wherein the switch via comprises at a bottom thereof a resistance change layer, wherein the wiring via and the second wiring comprise a barrier metal, wherein the wiring via and the second wiring comprises a region which electrically connects the wiring via with the second wiring without the barrier metal, and wherein the switch via and the second wiring are further electrically connected through the barrier metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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a substrate; a first wiring layer formed over the substrate; a first wiring formed in the first wiring layer; a second wiring layer located above the first wiring layer; a second wiring formed in the second wiring layer; a wiring via for connecting the first wiring and the second wiring; and a switch via for further connecting the first wiring and the second wiring, wherein the switch via comprises a resistance change layer, wherein the switch via comprises a single damascene structure, and wherein the wiring via comprises a dual damascene structure. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification