Memory module with termination component

• US 8,391,039 B2
• Filed: 11/15/2005
• Issued: 03/05/2013
• Est. Priority Date: 04/24/2001
• Status: Expired due to Term

• Current Assignee: Rampart Asset Management LLC
• Original Assignee: Rambus Inc.
• Inventors: Ware, Frederick A., Tsern, Ely K., Perego, Richard E., Hampel, Craig E.
• Primary Examiner(s): Luu, Pho M
• Application Number:
  US11/280,560
• Publication Number:
  US 20060077731A1
• Time in Patent Office: 2,667 Days
• Field of Search: 365/51, 365/52, 365/191, 365/194, 365/222, 365/233
• US Class Current: 365/51
• CPC Class Codes: G11C 5/04 Supports for storage elements , e.g. memory modules; Mounting or fixing of storage elements on such supports
• CPC Class Codes: G11C 5/063 Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
• CPC Class Codes: G11C 7/1039 using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
• CPC Class Codes: G11C 7/1048 Data bus control circuits, e.g. precharging, presetting, equalising

Abstract

A module having first and second memory devices and a termination component. A first signal line is coupled to the first memory device to provide first data thereto, the first data to be stored in a memory array of the first memory device during a write operation. A second signal line is coupled to the second memory device to provide thereto, the second data to be stored in a memory array of the second memory device during the write operation. A control signal path is coupled to the first memory device, the second memory device and the termination component such that a write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the first termination component, wherein the write command specifies the write operation.

Claims

1. A module comprising:

a first memory device having a memory array;

a first signal line coupled to the first memory device, the first signal line to provide first data to the first memory device, the first data to be stored in the memory array of the first memory device during a write operation;

a second memory device having a memory array;

a second signal line coupled to the second memory device, the second signal line to provide second data to the second memory device, the second data to be stored in the memory array of the second memory device during the write operation;

a first termination component; and

a control signal path coupled to the first memory device, the second memory device, and the first termination component such that a write command propagating on the control signal path propagates past the first memory device and the second memory device before reaching the first termination component, wherein the write command specifies the write operation.

2. The module of claim 1, further comprising a third signal line to convey a clock signal that indicates when the write command propagating on the control signal path is to be sampled by the first memory device, wherein the clock signal also indicates when the write command propagating on the control signal path is to be sampled by the second memory device.

3. The module of claim 1, further comprising:

a third signal line coupled to the first memory device, the third signal line to convey a first signal that indicates when the first memory device is to sample the first data in response to the write command; and

a second signal line coupled to the second memory device, the second signal line to convey a second signal that indicates when the second memory device is to sample the second data in response to the write command.

4. The module of claim 1, further comprising:

a second termination component coupled to the first signal line, wherein the second termination component is disposed on the first memory device; and

a third termination component coupled to the second signal line, wherein the third termination component is disposed on the second memory device.

5. A module comprising:

a first rank of memory devices including a first memory device, and a second memory device;

a second rank of memory devices including a third memory device, and a fourth memory device;

a first data signal line coupled to the first memory device and the third memory device;

a second data signal line coupled to the second memory device and the fourth memory device;

a termination component; and

a signal path coupled to the first rank of memory devices and the second rank of memory devices memory device, and the termination component such that control information propagating on the control signal path propagates past the first rank of memory devices and the second rank of memory devices before reaching the termination component.

6. The module of claim 5, wherein the control information specifies a write operation such that data is provided, via the first and second signal lines, to one of the first rank of memory devices and the second rank of memory device.

7. The module of claim 5, wherein the control information propagating on the signal path propagates past the first memory device before reaching the third memory device and propagates past the third memory device before reaching the second memory device, propagates past the second memory device before reaching the fourth memory device and propagates past the fourth memory device before reaching the termination component.

8. A module comprising:

a first memory device, a second memory device, a third memory device, and a fourth memory device;

a first signal line coupled to the first memory device and the third memory device, the first signal line being dedicated to data transfers involving one of the first memory device and the third memory device;

a second signal line coupled to the second memory device and the fourth memory device, the second signal line being dedicated to data transfers involving one of the second memory device and the fourth memory device;

a first termination component; and

a control signal path coupled to the first memory device, second memory device, third memory device, fourth memory device, and the first termination component such that a command propagating on the control signal path propagates past the first memory device before reaching the third memory device, propagates past the third memory device before reaching the second memory device, propagates past the second memory device before reaching the fourth memory device, and propagates past the fourth memory device before reaching the first termination component.

9. The module of claim 8, further comprising:

a second termination component disposed on the first memory device, wherein the second termination component is coupled to the first signal line; and

a third termination component disposed on the second memory device, wherein the third termination component is coupled to the second signal line.

10. The module of claim 8, wherein

the first memory device and the second memory device are included in a first rank of memory devices;

and

the third memory device and fourth memory device are included in a second rank of memory devices.

11. The module of claim 10, wherein the control signal path includes signal lines to carry address information, such that the address information propagating on the control signal path propagates past the first memory device before reaching the third memory device, propagates past the third memory device before reaching the second memory device, propagates past the second memory device before reaching the fourth memory device, and propagates past the fourth memory device before reaching the first termination component.