Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same
First Claim
1. A method of manufacturing a substrate of a semiconductor light emitting element comprising processes of:
- providing a mask on a first main surface of a substrate,forming a protrusion/recess structure on the first main surface of the substrate by carrying out an etching through the mask so as to form a plurality of protrusions each having a top surface and a bottom surface in different shapes and being spaced apart from each other, andforming a semiconductor substrate by growing semiconductor on a surface of the recess/protrusion structure,wherein the process of providing a mask comprises steps of forming a first mask which defines the shape of the bottom surface of protrusions, and forming a second mask which defines the shape of the top surface of the protrusions on the first mask.
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Abstract
A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting element 100 has a light emitting structure of a semiconductor 20 on a first main surface of a substrate 10. The first main surface of the substrate 10 has substrate protrusion portion 11, the bottom surface 14 of each protrusion is wider than the top surface 13 thereof in a cross-section, or the top surface 13 is included in the bottom surface 14 in a top view of the substrate. The bottom surface 14 has an approximately polygonal shape, and the top surface 13 has an approximately circular or polygonal shape with more sides than that of the bottom surface 14.
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Citations
22 Claims
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1. A method of manufacturing a substrate of a semiconductor light emitting element comprising processes of:
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providing a mask on a first main surface of a substrate, forming a protrusion/recess structure on the first main surface of the substrate by carrying out an etching through the mask so as to form a plurality of protrusions each having a top surface and a bottom surface in different shapes and being spaced apart from each other, and forming a semiconductor substrate by growing semiconductor on a surface of the recess/protrusion structure, wherein the process of providing a mask comprises steps of forming a first mask which defines the shape of the bottom surface of protrusions, and forming a second mask which defines the shape of the top surface of the protrusions on the first mask. - View Dependent Claims (2, 5, 6, 7, 9, 10, 11, 12)
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3. A method of manufacturing a substrate of a semiconductor light emitting element comprising processes of:
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providing a mask on a first main surface of a substrate; forming a protrusion/recess structure on the first main surface of the substrate by carrying out an etching through the mask so as to form a plurality of protrusions each having a top surface and a bottom surface in different shapes and being spaced apart from each other; and forming a semiconductor substrate by growing semiconductor on a surface of the recess/protrusion structure, wherein the process of forming a recess/protrusion structure is carried out by wet etching and the process includes a step of forming the shape of the bottom surface of the protrusions to include a crystal shape of substrate defined by the wet etching. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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4. A method of manufacturing a substrate of a semiconductor light emitting element comprising processes of:
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providing a mask on a first main surface of a substrate; forming a protrusion/recess structure on the first main surface of the substrate by carrying out an etching through the mask so as to form a plurality of protrusions each having a top surface and a bottom surface in different shapes and being spaced apart from each other; and forming a semiconductor substrate by growing semiconductor on a surface of the recess/protrusion structure, wherein the process of providing a mask includes forming the mask in an approximately circular shape, and the process of forming a recess/protrusion structure includes forming the bottom surface in a shape approximately a curve of constant width or Reuleaux polygon.
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8. A method of manufacturing a substrate of a semiconductor light emitting element comprising processes of:
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providing a mask having a shape of a curve of constant width on a first main surface of a substrate, and forming a protrusion/recess structure having a plurality of protrusions spaced apart each other on the first main surface of the substrate by carrying out a wet etching through the mask, so as to form a plurality of protrusions each having a bottom surface with a shape different than that of the mask, which is approximately a curve of constant width or a Reuleaux polygon including a crystal shape of the substrate defined by the etching.
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Specification