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Method of manufacturing semiconductor device having optical devices

  • US 8,394,705 B2
  • Filed: 05/19/2010
  • Issued: 03/12/2013
  • Est. Priority Date: 12/09/2009
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • providing a semiconductor substrate having a first region where a first optical device is to be formed and a second region where a waveguide is to be formed;

    forming a first buried oxide layer in the semiconductor substrate in the first region so that the semiconductor substrate in the first region is divided into a lower semiconductor layer and an upper semiconductor layer, while not forming the first buried oxide layer in the semiconductor substrate in the second region;

    defining an active portion by forming a trench in the semiconductor substrate in the second region;

    forming a capping semiconductor pattern over a top surface of the active portion and over a sidewall of the active portion;

    exposing a lower portion of the sidewall of the active portion;

    oxidizing the capping semiconductor pattern and the lower portion of the sidewall of the active portion to form an oxide layer surrounding a non-oxidized portion of the active portion; and

    forming a first optical device disposed in the upper semiconductor layer of the first region,wherein the non-oxidized portion of the active portion is configured to be a core of the waveguide through which optical signals pass,wherein the core is coupled to the first optical device, andwherein the forming of the capping semiconductor pattern comprises;

    forming a sacrificing pattern filling the trench;

    exposing an upper portion of the sidewall of the active portion by recessing the sacrificing pattern;

    conformally forming a capping semiconductor layer over the semiconductor substrate;

    removing the capping semiconductor layer over the recessed sacrificing pattern to expose the recessed sacrificing pattern and to form the capping semiconductor pattern; and

    removing the exposed sacrificing pattern to expose the lower portion of the sidewall of the active portion,wherein the capping semiconductor pattern extends to cover a top surface of the upper semiconductor layer in the first region, andwherein a portion of the capping semiconductor pattern over the upper semiconductor layer is oxidized by an oxidizing process, so that the oxide layer is formed over the upper semiconductor layer.

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