Plasma processing method and resist pattern modifying method
First Claim
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1. A plasma processing method for use with a plasma processing apparatus, which includes:
- a processing chamber configured to accommodate a target substrate therein and capable of exhausting its inside to vacuum;
a lower electrode arranged in the processing chamber and serving as a mounting table for the substrate;
an upper electrode arranged in the processing chamber to face the lower electrode;
a processing gas supply unit configured to supply a processing gas to the inside of the processing chamber;
a high frequency power supply configured to supply a high frequency power to at least one of the upper electrode and the lower electrode to generate a plasma; and
a DC power supply configured to supply a negative DC voltage to the upper electrode, the method comprising;
modifying a resist pattern of the substrate; and
trimming the modified resist pattern through a plasma etching,wherein said modifying includes;
supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode;
supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification;
supplying the negative DC voltage from the DC power supply to the upper electrode; and
controlling the negative DC voltage to the upper electrode to control a depth the resist pattern is modified.
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Abstract
A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
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Citations
19 Claims
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1. A plasma processing method for use with a plasma processing apparatus, which includes:
- a processing chamber configured to accommodate a target substrate therein and capable of exhausting its inside to vacuum;
a lower electrode arranged in the processing chamber and serving as a mounting table for the substrate;
an upper electrode arranged in the processing chamber to face the lower electrode;
a processing gas supply unit configured to supply a processing gas to the inside of the processing chamber;
a high frequency power supply configured to supply a high frequency power to at least one of the upper electrode and the lower electrode to generate a plasma; and
a DC power supply configured to supply a negative DC voltage to the upper electrode, the method comprising;modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching, wherein said modifying includes; supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; supplying the negative DC voltage from the DC power supply to the upper electrode; and controlling the negative DC voltage to the upper electrode to control a depth the resist pattern is modified. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
- a processing chamber configured to accommodate a target substrate therein and capable of exhausting its inside to vacuum;
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13. A resist pattern modifying method for use with a plasma processing apparatus, which includes:
- a processing chamber configured to accommodate a target substrate therein and capable of exhausting its inside to vacuum;
a lower electrode arranged in the processing chamber and serving as a mounting table for the substrate;
an upper electrode arranged in the processing chamber to face the lower electrode;
a processing gas supply unit configured to supply a processing gas to the inside of the processing chamber;
a high frequency power supply configured to supply a high frequency power to at least one of the upper electrode and the lower electrode to generate a plasma; and
a DC power supply configured to supply a negative DC voltage to the upper electrode, the method comprisingmodifying a resist pattern of the substrate to form a modified resist pattern, wherein said modifying is carried out prior to trimming the resist pattern through a plasma etching, trimming the resist pattern to form a trimmed resist pattern by plasma etching; wherein the resist pattern includes a top and at least two sides, including a first side and a second side, wherein the modified resist pattern includes a first width measured from an edge of the first side to an edge of the second side, wherein the trimmed resist pattern includes a second width measured from an edge of the first side to an edge of the second side, and wherein the second width is smaller than the first width such that the trimmed resist pattern is narrower than the modified resist pattern wherein said modifying includes; supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode; and controlling the negative DC voltage to the upper electrode to control a depth the resist pattern is modified. - View Dependent Claims (14, 15, 16, 17, 18, 19)
- a processing chamber configured to accommodate a target substrate therein and capable of exhausting its inside to vacuum;
Specification