Inorganic-organic hybrid thin-film transistors using inorganic semiconducting films

• US 8,395,150 B2
• Filed: 01/16/2012
• Issued: 03/12/2013
• Est. Priority Date: 12/20/2005
• Status: Active Grant

• Current Assignee: Northwestern University
• Original Assignee: Northwestern University
• Inventors: Marks, Tobin J., Facchetti, Antonio, Wang, Lian, Yoon, Myung-Han, Yang, Yu
• Primary Examiner(s): GREEN, TELLY D
• Application Number:
  US13/351,050
• Publication Number:
  US 20120261655A1
• Time in Patent Office: 421 Days
• Field of Search: 257/43, 257/E21.464, 438/101, 438/109
• US Class Current: 257/43
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H01L 29/78681 having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/486 the channel region comprising two or more active layers, e.g. forming pn heterojunctions

Abstract

Inorganic semiconducting compounds, composites and compositions thereof, and related device structures.

Claims

1. A thin film transistor device comprising an inorganic-organic hybrid thin film composition, the inorganic-organic hybrid thin film composition comprising an inorganic semiconductor component coupled to an organic component, wherein the inorganic semiconductor component is a channel layer and comprises a metal oxide comprising indium, and wherein the organic component comprises chemical moieties that can afford substrate sorption, condensation, or intermolecular crosslinking.

2. The device of claim 1, wherein the inorganic semiconductor component comprises a metal oxide comprising indium and one or more metals independently selected from a Group 12 metal and a Group 13 metal.

3. The device of claim 1, wherein the inorganic semiconductor component is derived from a metal oxide target comprising indium.

4. The device of claim 1, wherein the inorganic semiconductor component comprises a room temperature ion-assisted deposition product of a metal oxide comprising indium.

5. The device of claim 1, wherein the organic component comprises hydrolyzable moieties.

6. The device of claim 1, wherein the organic component comprises a dielectric polymer selected from poly(vinylphenol), polystyrene, and copolymers thereof.

7. The device of claim 1, wherein the organic component comprises a multi-layered composition, the multi-layered composition comprising periodically alternating layers, the periodically alternating layers comprising one or more layers comprising a silyl moiety, and one or more layers comprising a π

-polarizable moiety.

8. The device of claim 7, wherein at least some of the periodically alternating layers are coupled to an adjacent layer by a coupling layer comprising a siloxane matrix.

9. The device of claim 1, wherein the inorganic-organic hybrid thin film composition is coupled to a substantially transparent substrate.

10. The device of claim 1, wherein the organic component is coupled to a gate substrate, and the inorganic semiconductor component is an n-channel layer coupled to the organic component.

11. The device of claim 1, wherein the device is a transparent thin film transistor.

12. A thin film transistor device comprising an inorganic-organic hybrid thin film composition, the inorganic-organic hybrid thin film composition comprising an inorganic semiconductor component coupled to an organic component, wherein the organic component comprises a polymeric component, a π

-polarizable component, or a combination thereof; and

the inorganic semiconductor component is a channel layer and comprises indium in the form of an oxide, a nitride, a phosphide, an arsenide, or a chalcogenide.

13. The device of claim 12, wherein the inorganic semiconductor component comprises a metal oxide comprising indium and one or more metals independently selected from a Group 12 metal, a Group 13 metal, and a Group 14 metal.

14. The device of claim 12, wherein the organic component comprises a π

-polarizable component that is coupled to at least one of a silyl moiety and a siloxane moiety.

15. The device of claim 14, wherein the π

-polarizable component comprises a non-linear optical chromophore.

16. The device of claim 12, wherein the inorganic-organic hybrid thin film composition is coupled to a substrate selected from glass, silicon, an indium oxide material, and a flexible plastic material.

17. A thin film transistor device comprising an inorganic-organic hybrid thin film composition, the inorganic-organic hybrid thin film composition comprising an inorganic semiconductor component coupled to an organic component, wherein the organic component comprises a polymeric component, a π

-polarizable component, or a combination thereof; and

the inorganic semiconductor component is a channel layer and comprises a metal oxide comprising indium.

18. The device of claim 17, wherein the inorganic semiconductor component comprises a room temperature ion-assisted deposition product of a metal oxide comprising indium.

19. The device of claim 17, wherein the organic component comprises a polymer blend, the polymer blend comprising a polymeric component and a component comprising hydrolyzable moieties.

20. The device of claim 17, wherein the organic component comprises a polymer blend, the polymer blend comprising a polymeric component and a component affording substrate sorption, condensation, or intermolecular crosslinking.