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Semiconductor device and structure

  • US 8,395,191 B2
  • Filed: 10/07/2010
  • Issued: 03/12/2013
  • Est. Priority Date: 10/12/2009
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a first single crystal layer comprising first transistors and a first alignment mark;

    at least one metal layer overlying said first single crystal layer, wherein said at least one metal layer comprises copper or aluminum; and

    a second layer comprising activated dopant regions, said second layer overlying said at least one metal layer, wherein said second layer comprises second transistors, wherein said second transistors are processed aligned to said first alignment mark with less than 100 nm alignment error, wherein said second transistors comprise mono-crystal, horizontally-oriented transistors.

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