Solid-state imaging device
First Claim
1. A solid-state imaging device which is of a MOS type and includes a plurality of pixels arranged in rows and columns, said solid-state imaging device comprising:
- a semiconductor substrate;
a photoelectric conversion unit included in each of the pixels, formed in said semiconductor substrate, and configured to convert, into a signal charge, light that is incident from a first main surface of said semiconductor substrate;
a transfer transistor which is included in each of the pixels and formed in a second main surface of said semiconductor substrate, and transfers the signal charge converted by said photoelectric conversion unit, the second main surface being located opposite to the first main surface;
a first light shielding film which is conductive and formed on at least part of a boundary between the pixels, above the first main surface of said semiconductor substrate;
an overflow drain region formed in the first main surface of said semiconductor substrate and electrically connected to said first light shielding film; and
an overflow barrier region formed between said overflow drain region and said photoelectric conversion unit.
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Accused Products
Abstract
A solid-state imaging device according to the present invention is of a MOS type and includes a plurality of pixels arranged in rows and columns, and includes: a semiconductor substrate; a photodiode which is formed in the semiconductor substrate and converts, into a signal charge, light that is incident from a first main surface of the semiconductor substrate; a transfer transistor which is formed in a second main surface of the semiconductor substrate and transfers the signal charge converted by the photodiode; a light shielding film which is conductive and formed on a boundary between the pixels, above the first main surface of the semiconductor substrate; an overflow drain region electrically connected to the light shielding film and formed in the first main surface of the semiconductor substrate; and an overflow barrier region formed between the overflow drain region and the photodiode.
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Citations
14 Claims
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1. A solid-state imaging device which is of a MOS type and includes a plurality of pixels arranged in rows and columns, said solid-state imaging device comprising:
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a semiconductor substrate; a photoelectric conversion unit included in each of the pixels, formed in said semiconductor substrate, and configured to convert, into a signal charge, light that is incident from a first main surface of said semiconductor substrate; a transfer transistor which is included in each of the pixels and formed in a second main surface of said semiconductor substrate, and transfers the signal charge converted by said photoelectric conversion unit, the second main surface being located opposite to the first main surface; a first light shielding film which is conductive and formed on at least part of a boundary between the pixels, above the first main surface of said semiconductor substrate; an overflow drain region formed in the first main surface of said semiconductor substrate and electrically connected to said first light shielding film; and an overflow barrier region formed between said overflow drain region and said photoelectric conversion unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification