Power semiconductor device
First Claim
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1. A power semiconductor device, comprising:
- an element unit comprising a vertical-type MOSFET,the vertical-type MOSFET comprising,a first semiconductor layer with a first conductivity type,a second semiconductor layer with the first conductivity type provided on a first main surface of the first semiconductor layer, an impurity concentration of the second semiconductor layer being lower than the first semiconductor layer,a third semiconductor layer with a second conductivity type provided on a surface of the second semiconductor layer,a fourth semiconductor layer with a first conductivity type selectively provided on a surface of the third semiconductor layer,a fifth semiconductor layer with the second conductivity type selectively provided on the surface of the third semiconductor layer,an insulator covering inner surfaces of a plurality of trenches, each trench penetrating the third semiconductor layer from a surface of the fourth semiconductor layer or a surface of the fifth semiconductor layer reaching the second semiconductor layer, the adjacent trenches being provided with a first interval in between,a first embedded conductive layer embedded at a bottom of the trench via the insulator,a second embedded conductive layer embedded at an upper portion of the first embedded conductive layer via the insulator,an interlayer insulator provided on the second embedded conductive layer,a first main electrode provided on a second main surface of the first semiconductor layer opposed to the first main surface, the first main electrode electrically connecting to the first semiconductor layer,a second main electrode provided on the a fourth semiconductor layer, the fifth semiconductor layer and the interlayer insulator, the second main electrode electrically connecting to the fourth semiconductor layer and the fifth semiconductor layer; and
a diode unit adjacent to the element unit comprising,the first semiconductor layer, the second insulator semiconductor layer, the third semiconductor layer, the fifth semiconductor layer, the insulator covering the inner surfaces of the plurality of the trenches, the adjacent trenches being provided with a second interval in between, the second interval being larger than the first interval, the first embedded conductive layer, the second embedded conductive layer, the interlayer insulator, the first main electrode, and the second main electrode.
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Abstract
According to one embodiment, a semiconductor device, includes an element unit including a vertical-type MOSFET, the vertical-type MOSFET in including a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a fifth semiconductor layer sequentially stacked in order, an impurity concentration of the second semiconductor layer being lower than the first semiconductor layer, an insulator covering inner surfaces of a plurality of trenches, the adjacent trenches being provided with a first interval in between, and a diode unit including basically with the units of the element unit, the adjacent trenches being provided with a second interval in between, the second interval being larger than the first interval.
21 Citations
15 Claims
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1. A power semiconductor device, comprising:
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an element unit comprising a vertical-type MOSFET, the vertical-type MOSFET comprising, a first semiconductor layer with a first conductivity type, a second semiconductor layer with the first conductivity type provided on a first main surface of the first semiconductor layer, an impurity concentration of the second semiconductor layer being lower than the first semiconductor layer, a third semiconductor layer with a second conductivity type provided on a surface of the second semiconductor layer, a fourth semiconductor layer with a first conductivity type selectively provided on a surface of the third semiconductor layer, a fifth semiconductor layer with the second conductivity type selectively provided on the surface of the third semiconductor layer, an insulator covering inner surfaces of a plurality of trenches, each trench penetrating the third semiconductor layer from a surface of the fourth semiconductor layer or a surface of the fifth semiconductor layer reaching the second semiconductor layer, the adjacent trenches being provided with a first interval in between, a first embedded conductive layer embedded at a bottom of the trench via the insulator, a second embedded conductive layer embedded at an upper portion of the first embedded conductive layer via the insulator, an interlayer insulator provided on the second embedded conductive layer, a first main electrode provided on a second main surface of the first semiconductor layer opposed to the first main surface, the first main electrode electrically connecting to the first semiconductor layer, a second main electrode provided on the a fourth semiconductor layer, the fifth semiconductor layer and the interlayer insulator, the second main electrode electrically connecting to the fourth semiconductor layer and the fifth semiconductor layer; and a diode unit adjacent to the element unit comprising, the first semiconductor layer, the second insulator semiconductor layer, the third semiconductor layer, the fifth semiconductor layer, the insulator covering the inner surfaces of the plurality of the trenches, the adjacent trenches being provided with a second interval in between, the second interval being larger than the first interval, the first embedded conductive layer, the second embedded conductive layer, the interlayer insulator, the first main electrode, and the second main electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A power semiconductor device, comprising:
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an element unit comprising a vertical-type MOSFET, the vertical-type MOSFET comprising, a first semiconductor layer with a first conductivity type, a second semiconductor layer with the first conductivity type provided on a first main surface of the first semiconductor layer, an impurity concentration of the second semiconductor layer being lower than the first semiconductor layer, a third semiconductor layer with a second conductivity type provided on a surface of the second semiconductor layer, a fourth semiconductor layer with a first conductivity type selectively provided on a surface of the third semiconductor layer, a fifth semiconductor layer with the second conductivity type selectively provided on the surface of the third semiconductor layer, an insulator covering inner surfaces of a plurality of trenches, each trench penetrating the third semiconductor layer from a surface of the fourth semiconductor layer or a surface of the fifth semiconductor layer reaching the second semiconductor layer, a film thickness of a sidewall at a bottom side of the insulator opposed to the second semiconductor layer being thicker than a film thickness of a sidewall at an upper side of the insulator, the adjacent trenches being provided with a first interval in between, an embedded conductive layer embedded in the trench via the insulator, an interlayer insulator provided on the embedded conductive layer, a first main electrode provided on a second main surface of the first semiconductor layer opposed to the first main surface, the first main electrode electrically connecting to the first semiconductor layer, a second main electrode provided on the a fourth semiconductor layer, the fifth semiconductor layer and the interlayer insulator, the second main electrode electrically connecting to the fourth semiconductor layer and the fifth semiconductor layer; and a diode unit adjacent to the element unit comprising, the first semiconductor layer, the second insulator semiconductor layer, the third semiconductor layer, the fifth semiconductor layer, the insulator covering the inner surfaces of the plurality of the trenches, the adjacent trenches being provided with a second interval in between, the second interval being larger than the first interval, the first embedded conductive layer, the second embedded conductive layer, the interlayer insulator, the first main electrode, and the second main electrode. - View Dependent Claims (12, 13, 14, 15)
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsKawaguchi, Yusuke
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Primary Examiner(s)Richards, N Drew
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Assistant Examiner(s)SINGAL, ANKUSH K
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Application NumberUS13/233,993Publication NumberTime in Patent Office544 DaysField of Search257/492, 257/331, 257/316, 257/110, 257/119, 257/341, 257/E21.419, 257/E29.256, 257/E29.257, 257/E29.201, 257/E29.26US Class Current257/316CPC Class CodesH01L 27/0727 in combination with diodes,...H01L 29/0626 with a localised breakdown ...H01L 29/0696 of cellular field-effect de...H01L 29/407 Recessed field plates, e.g....H01L 29/4236 within a trench, e.g. trenc...H01L 29/42368 the thickness being non-uni...H01L 29/4238 characterised by the surfac...H01L 29/7805 in antiparallel, e.g. freew...H01L 29/7808 the other device being a br...H01L 29/7813 with trench gate electrode,...
