Subset selection of RFID tags using light

• US 8,395,505 B2
• Filed: 04/07/2009
• Issued: 03/12/2013
• Est. Priority Date: 04/07/2008
• Status: Active Grant

• Current Assignee: RUIZHANG TECHNOLOGY LIMITED COMPANY
• Original Assignee: Alien Technology Corporation
• Inventors: Hadley, Mark Alfred, Smith, John Stephen, Atherton, James Harold, Tu, Jay, Boling, Edward John
• Primary Examiner(s): La, Anh V
• Application Number:
  US12/420,009
• Publication Number:
  US 20120249303A1
• Time in Patent Office: 1,435 Days
• Field of Search: 3405721-5728, 340/10.1, 340/10.34, 340/10.4, 340/10.5, 340/10.51, 340/539.1, 340/539.11, 340/636.2, 340657-668, 363/125, 363/126, 710/22, 365/145, 235/451, 329311-314, 329/347, 329/369, 375/320, 375/340
• US Class Current: 340/572.1
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0728 the arrangement being an optical or sound-based communication interface
• CPC Class Codes: G06K 19/073 Special arrangements for circuits, e.g. for protecting identification code in memory protection against unauthorised use of computer memory G06F12/14
• CPC Class Codes: G06K 19/077 Constructional details, e.g. mounting of circuits in the carrier
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 7/0008 General problems related to the reading of electronic memory record carriers, independent of its reading method, e.g. power transfer
• CPC Class Codes: G06K 7/10009 sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
• CPC Class Codes: G06K 7/10079 the collision being resolved in the spatial domain, e.g. temporary shields for blindfolding the interrogator in specific directions
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence
• CPC Class Codes: H02M 7/217 using semiconductor devices only

Abstract

Methods and apparatuses for selecting a subset of RFID tags are provided in some embodiments. These methods and apparatuses utilize the susceptibility to light by persistent nodes found in passive tags. Light can be used to intentionally reduce persistence times in a particular subset tags or even an individual tag. Then, persistent nodes can be used as a selection criterion to distinguish previously illuminated tags from non-illuminated tags. In other embodiments, a power circuit receives a RF input source and generates a direct current (DC) output voltage. The circuit includes a bias circuit to supply a gate to source bias, which is independent of the DC output voltage. The circuit further includes a voltage multiplier circuit that is coupled to the bias circuit. The voltage multiplier circuit has MOS transistors with one transistor to receive the gate to source bias.

Claims

1. A circuit to provide a power supply, comprising:

a first bias circuit to supply a gate to source bias, which is independent of a direct current (DC) output voltage;

a voltage multiplier circuit coupled to the first bias circuit, the voltage multiplier circuit having at least one n-channel metal-oxide-semiconductor (NMOS) transistor with the voltage multiplier circuit to generate the DC output voltage for powering a RF identification tag, the first bias circuit to receive a RF input source and generate the gate to source bias for a gate terminal of the NMOS transistor.

2. The circuit of claim 1 wherein the first bias circuit to generate the gate to source bias for the gate terminal of the NMOS transistor to DC bias the NMOS transistor substantially to a threshold voltage of the NMOS transistor and wherein the first bias circuit is coupled in series between the gate terminal of the NMOS transistor of the voltage multiplier circuit and a DC voltage input to the voltage multiplier circuit.

3. The circuit of claim 1, further comprising:

a second bias circuit to receive the RF input source and to generate a gate to source bias for a gate terminal of a p-channel metal-oxide-semiconductor (PMOS) transistor of the voltage multiplier circuit.

4. The circuit of claim 3 wherein the second bias circuit to generate the gate to source bias for the gate terminal of the PMOS transistor to DC bias the PMOS transistor substantially to a threshold voltage of the PMOS transistor.

5. The circuit of claim 2 wherein the first bias circuit comprises a NMOS transistor, a PMOS transistor, and at least one capacitor.

6. The circuit of claim 5 wherein a gate terminal of the NMOS transistor of the first bias circuit is coupled to a source terminal of the PMOS transistor of the first bias circuit and a gate terminal of the PMOS transistor is coupled to a source terminal of the NMOS transistor in order to lower threshold voltages of the NMOS and PMOS transistors.

7. The circuit of claim 1 wherein a second bias circuit to receive the RF input source and to generate a gate to source bias for a gate terminal of another NMOS transistor of the voltage multiplier circuit.

8. A multi-stage voltage multiplier circuit, comprising:

a first stage of the multi-stage voltage multiplier circuit comprising;

a first bias circuit having no effective load;

a first voltage multiplier circuit coupled to the first bias circuit, the first voltage multiplier circuit having at least one n-channel metal-oxide-semiconductor (NMOS) transistor with the first voltage multiplier circuit to generate a direct current (DC) output voltage, the first bias circuit to receive a RF input source and generate a gate to source bias for a gate terminal of the NMOS transistor of the first voltage multiplier circuit.

9. The multi-stage voltage multiplier circuit of claim 8 wherein the first stage further comprises a second bias circuit to receive the RF input source and generate a gate to source bias for a gate terminal of a p-channel metal-oxide-semiconductor (PMOS) transistor or another NMOS transistor of the first voltage multiplier circuit.

10. The voltage multiplier circuit of claim 8 wherein the first bias circuit comprises a NMOS transistor, a PMOS transistor, and at least one capacitor.

11. The voltage multiplier circuit of claim 8, further comprising:

a second stage of the multi-stage voltage multiplier circuit comprising;

a third bias circuit;

a second voltage multiplier circuit coupled to the third bias circuit, the second voltage multiplier circuit having at least one NMOS transistor with the second voltage multiplier circuit to receive the DC output voltage from the first stage and generate an increased DC output voltage, the third bias circuit to receive the RF input source and to generate a gate to source bias for a gate of a NMOS transistor of the second voltage multiplier circuit.

12. The multi-stage voltage multiplier circuit of claim 11 wherein the second voltage multiplier circuit further comprises at least one p-channel metal-semiconductor-oxide (PMOS) transistor with a gate terminal of one of the PMOS transistors of the second voltage multiplier circuit being coupled to ground.

13. A demodulator circuit, comprising:

a first bias circuit to supply a gate to source bias;

a first clamping transistor coupled to the first bias circuit; and

a voltage multiplier circuit coupled to the clamping transistor, the voltage multiplier circuit having at least one n-channel metal-oxide-semiconductor (NMOS) transistor with the voltage multiplier circuit to generate a demodulated output signal that demodulates information carried by a RF input signal, the first bias circuit to receive the RF input signal and generate the gate to source bias for a gate terminal of the NMOS transistor, the first clamping transistor to limit a value of the gate to source bias to approximately one threshold voltage of the first clamping transistor or less.

14. The demodulator of claim 13 wherein the first bias circuit to generate the gate to source bias for the gate terminal of the NMOS transistor to DC bias the NMOS transistor substantially to a threshold voltage of the NMOS transistor and wherein the first bias circuit is coupled in series between the gate of the NMOS transistor and a DC voltage input to the voltage multiplier circuit.

15. The demodulator of claim 13, further comprising:

a second bias circuit to receive the RF input source and generate a gate to source bias for a gate terminal of a p-channel metal-oxide-semiconductor (PMOS) transistor or another NMOS transistor of the voltage multiplier circuit; and

a second clamping transistor coupled to the second bias circuit, the second clamping transistor to limit a value of the gate to source bias to approximately one threshold voltage of the second clamping transistor or less.

16. The demodulator of claim 13, further comprising:

an isolation switch coupled to the first bias circuit, the isolation switch to regulate a voltage bias generated by the first bias circuit.

17. The demodulator of claim 14 wherein the first bias circuit comprises a NMOS transistor, a PMOS transistor, and at least one capacitor.

18. A circuit to provide a power supply, comprising:

a first bias circuit to supply a gate to source bias, which is independent of a direct current (DC) output voltage; and

a voltage multiplier circuit coupled to the first bias circuit, the voltage multiplier circuit having at least one p-channel metal-oxide-semiconductor (PMOS) transistor with the voltage multiplier circuit to generate the DC output voltage for powering a RF identification tag, the first bias circuit to receive a RF input source and generate the gate to source bias for a gate terminal of the PMOS transistor.

19. The circuit of claim 18 wherein the first bias circuit to generate the gate to source bias for the gate terminal of the PMOS transistor to DC bias the PMOS transistor substantially to a threshold voltage of the PMOS transistor and wherein the first bias circuit is coupled in series between the gate terminal of the PMOS transistor of the voltage multiplier circuit and a DC voltage input to the voltage multiplier circuit.

20. The circuit of claim 18, further comprising:

a second bias circuit to receive the RF input source and to generate a gate to source bias for a gate terminal of another PMOS transistor of the voltage multiplier circuit.