Lithographic apparatus and device manufacturing method

• US 8,395,755 B2
• Filed: 07/21/2009
• Issued: 03/12/2013
• Est. Priority Date: 05/30/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: George, Richard Alexander, Gui, Cheng-Qun, De Jager, Pieter Willem Herman, Van Leeuwen, Robbert Edgar, Burghoorn, Jacobus
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): Riddle, Christine
• Application Number:
  US12/506,808
• Publication Number:
  US 20090284720A1
• Time in Patent Office: 1,330 Days
• Field of Search: 2502011-2012, 250/492.2, 250/548, 355/53, 355/55, 355 67- 68, 356399-401, 356614-624, 430/30, 430311-313
• US Class Current: 355/68
• CPC Class Codes: G03B 27/53 Automatic registration or positioning of originals with respect to each other or the photosensitive layer
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70791 Large workpieces, e.g. glass substrates for flat panel displays or solar panels
• CPC Class Codes: G03F 9/7003 Alignment type or strategy, e.g. leveling, global alignment
• CPC Class Codes: G03F 9/7026 Focusing

Abstract

A lithography apparatus includes a projection system configured to project a radiation beam onto a substrate, a detector configured to inspect the substrate, and a substrate table configured to support the substrate and move the substrate relative to the projection system and the detector. The detector is arranged to inspect a portion of the substrate while the substrate is moved and before the portion is exposed to the radiation beam.

Claims

1. A lithography apparatus comprising:

a projection system configured to project a radiation beam onto a substrate;

an alignment detector configured to inspect one or more patterned features on the substrate; and

a substrate table configured to support the substrate and move the substrate relative to the projection system and the alignment, detector;

wherein the alignment detector is further configured to inspect a full width of the substrate while the substrate is moved and before a portion of the full width is exposed to the radiation beam.

2. The apparatus of claim 1, wherein the alignment detector has a plurality of sensors configured to substantially simultaneously inspect the full width of the substrate.

3. The apparatus of claim 1, further comprising a controller configured to adjust exposure conditions based on the inspecting.

4. The apparatus of claim 1, wherein the apparatus is configured to provide a patterned beam using an array of individually controllable elements.

5. The apparatus of claim 4, wherein the apparatus comprises a plurality of arrays of individually controllable elements.

15. The apparatus of claim 1, wherein the alignment detector is further configured to inspect one or more patterned features on the substrate while the alignment detector remains stationary.

6. A device manufacturing method comprising:

moving a substrate relative to a projection system and an alignment detector;

inspecting one or more patterned features on the substrate using the alignment detector, wherein the inspecting occurs across a full width of the substrate; and

exposing a portion of the full width of the substrate using the projection system while one or more exposure conditions are adjusted according to the inspection.

7. The method of claim 6, wherein the inspecting and the exposing occur while moving the substrate.

8. The method of claim 6, wherein moving the substrate relative to the projection system and the alignment detector occurs between consecutive exposures.

9. The method of claim 6, wherein moving the substrate relative to the projection system and the alignment detector occurs during continuous exposure.

10. The method of claim 6, wherein a portion of the fall width of the substrate being inspected subsequently becomes the portion of the substrate being exposed.

11. The method of claim 6, wherein the exposure conditions are adjusted to optimize for overlay accuracy.

12. The method of claim 6, wherein the substrate moves at a substantially constant velocity relative to the projection system and the alignment detector.

13. The method of claim 6, wherein the position of the alignment detector relative to the projection system is substantially fixed and known.

14. The method of claim 6, further comprising monitoring the position of the alignment detector relative to the projection system during exposure.

16. The method of claim 6, wherein the inspecting further comprises inspecting one or more patterned features while the alignment detector remains stationary.