Optimized polarization illumination

• US 8,395,757 B2
• Filed: 05/04/2010
• Issued: 03/12/2013
• Est. Priority Date: 12/19/2003
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools B.V. (ASML Holding NV)
• Inventors: Socha, Robert, Flagello, Donis, Hansen, Steve
• Primary Examiner(s): Kim, Peter B
• Application Number:
  US12/773,775
• Publication Number:
  US 20110051114A1
• Time in Patent Office: 1,043 Days
• Field of Search: 355/71, 355/67, 355/53, 353/30, 430/30, 356/365
• US Class Current: 355/71
• CPC Class Codes: G03F 7/70125 Use of illumination settings tailored to particular mask patterns details of setting means G03F7/70091
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70566 Polarisation control
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns

Abstract

Disclosed concepts include a method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate. Polarized illumination is optimized by determining an illumination intensity for at least one point on an illuminator for at least two polarization states, determining image log slope for the at least one point on the illuminator for the at least two polarization states, determining a maximum image log slope (ILS) where the ILS is near zero for the at least one point on the illuminator, and selecting an optimal polarization state corresponding to the at least two polarization states that minimizes an ILS for the at least one point on the illuminator. This may be repeated for a plurality of points on the illuminator.

Claims

1. A method of optimizing polarization of an illumination of a pattern to be formed in a surface of a substrate, the illumination originating from an illuminator plane comprising individual pixels from which light illuminates the pattern for being projected via a projection system in the surface of the substrate, the method comprising the steps of:

(a) selecting a plurality of fragmentation points in the pattern;

(b) determining an illumination intensity for at least one pixel in an illuminator plane for at least two polarization states;

(c) determining an image log slope at the fragmentation points at substrate level for the at least one pixel on the illuminator plane for the at least two polarization states;

(d) determining a minimum image log slope (ILS) for the fragmentation points for each of the at least two polarization states;

(e) selecting an optimal polarization state for the at least one pixel in the illuminator plane that maximizes the minimum ILS; and

(f) repeating steps (a)-(e) for each of a plurality of pixels in the illuminator plane.

2. The method according to claim 1, further comprising repeating steps (a)-(d) for each of a plurality of pixels in part of the illuminator plane depending on a symmetry of a feature.

3. The method according to claim 2 further comprising the step of combining the optimal polarization for each of the plurality of pixels in the illuminator plane for creating an optimal polarized illumination of the pattern.

4. The method according to claim 1, further comprising repeating steps (a)-(d) for each of a plurality of pixels in half of the illuminator plane.

5. The method according to claim 1, wherein the optimal polarization state is a combination of the at least two polarization states.

6. The method according to claim 1, wherein the optimal polarization state corresponds to one of the at least two polarization states.

7. The method according to claim 1, wherein the at least two polarization states includes at least X and Y polarization states.

8. The method according to claim 1, wherein the method further comprises, upon determining an optimum polarization of illumination of the pattern, manufacturing a device, the device including the pattern, by:

illuminating the pattern using substantially the optimum polarization; and

projecting an image of the pattern onto a substrate.

9. The method according to claim 1, wherein a mask design that includes the pattern comprises user-defined information identifying a target portion in the surface of the substrate where the pattern is desired to be printed.

10. The method according to claim 1, wherein the one or more of the plurality of fragmentation points are included within the identified target portion in the surface of the substrate.

11. The method according to claim 10, wherein number of fragmentation points depends on a complexity of the pattern to be printed at the identified target portion in the surface of the substrate.

12. The method according to claim 10, wherein number of fragmentation points depends on a level of accuracy desired for the optimization of the polarization of the illuminator.

13. A computer program product, comprising executable code transportable by at least one non-transitory machine readable medium, wherein execution of the code by at least one programmable computer causes the at least one programmable computer to perform optimization of polarization of an illumination of a pattern to be formed in a surface of a substrate, the illumination originating from an illuminator plane comprising individual pixels from which light illuminates the pattern for being projected via a projection system in the surface of the substrate, the optimization of polarization comprising, for each of a plurality of pixels in the illuminator plane:

selecting a plurality of fragmentation points in the pattern;

determining an illumination intensity for at least one pixel in an illuminator plane for at least two polarization states;

determining an image log slope at the fragmentation points at substrate level for the at least one pixel on the illuminator plane for the at least two polarization states;

determining a minimum image log slope (ILS) for the fragmentation points for each of the at least two polarization states ; and

selecting an optimal polarization state for the at least one pixel in the illuminator plane that maximizes the minimum ILS.

14. An apparatus for imaging a mask pattern on a target portion of a substrate using optimized polarized illumination for increasing process window, said apparatus comprising:

a radiation system for supplying a projection beam of polarized radiation;

an illuminator for receiving the projection beam of radiation and projecting an adjusted beam of radiation on a portion of a mask, the illumination emitted by the illuminator originating from an illuminator plane comprising individual pixels from which light illuminates the mask pattern for being projected via a projection system in the surface of the substrate, the projection system for imaging a corresponding irradiated portion of a mask onto the target portion of the substrate; and

a computer system configured to optimize polarization and intensity at each of the plurality of pixels illuminating the mask pattern, wherein for each of the plurality of pixels, the computer system is configured to ;

select a plurality of fragmentation points in the pattern;

determine an illumination intensity for at least one pixel in an illuminator plane for at least two polarization states;

determine an image log slope at the fragmentation point for the at least one pixel in the illuminator plane for the at least two polarization states;

determine a minimum image log slope (ILS) for the fragmentation points for each of the at least two polarization states; and

select an optimal polarization state for the at least one pixel in the illuminator plane that maximized the minimum ILS;

thereby adjusting the illuminator at the plurality of pixels to optimize polarization and intensity at each of the plurality of pixels.