Compact pressure-sensing device

• US 8,397,579 B2
• Filed: 06/03/2009
• Issued: 03/19/2013
• Est. Priority Date: 04/08/2005
• Status: Active Grant

• Current Assignee: Analatom Incorporated
• Original Assignee: Analatom Incorporated
• Inventors: Niblock, Trevor Graham Edward
• Primary Examiner(s): Caputo, Lisa
• Assistant Examiner(s): JENKINS, JERMAINE L
• Application Number:
  US12/477,829
• Publication Number:
  US 20110001396A1
• Time in Patent Office: 1,385 Days
• Field of Search: None
• US Class Current: 73/727
• CPC Class Codes: F02B 77/085 with sensors measuring combustion processes, e.g. knocking, pressure, ionization, combustion flame
• CPC Class Codes: F02D 35/023 by determining the cylinder pressure
• CPC Class Codes: F02D 35/025 by determining temperatures inside the cylinder, e.g. combustion temperatures
• CPC Class Codes: G01K 2205/00 Application of thermometers in motors, e.g. of a vehicle
• CPC Class Codes: G01K 7/16 using resistive elements resistive elements per se H01C, H01L
• CPC Class Codes: G01L 23/18 by resistance strain gauges
• CPC Class Codes: G01L 9/0052 of piezoresistive elements circuits therefor G01L9/06
• CPC Class Codes: G01M 15/08 by monitoring pressure in cylinders
• CPC Class Codes: Y10T 29/49007 Indicating transducer

Abstract

The innovations herein include a compact sensing device that is capable of measuring the conditions (e,g, pressure, temperature) inside a cylinder of an internal combustion engine. Aspects also include a cost-effective method of fabricating the sensing device. An exemplary sensing device includes a substrate, a beam, and piezo-resistive sensing elements. The beam, which is formed on the substrate, is capable of deflecting according to different pressures applied to different beam surfaces. The piezo-resistive sensing elements are coupled to the beam and detect beam deflection. The piezo-resistive sensing elements generate an electrical signal corresponding to the beam deflection.

Claims

1. A sensing device comprising:

a planar substrate characterized by a plane;

a beam formed on the substrate, the beam being capable of deflecting in the plane of the substrate into a cavity of the substrate in response to different pressures applied to the beam, wherein the beam deflects according to a difference between a first pressure on a first side of the beam inside the cavity and second pressure on a second side of the beam outside the cavity in a space outside the sensing device; and

a piezo-resistive sensing element coupled to the beam, wherein the piezo-resistive sensing element detects beam deflection responsive to a gas flow outside the cavity adjacent the second side and generates an electrical signal as a function of beam deflection;

wherein the sensing device has a thickness of less than about 100 μ

m.

2. The sensing device of claim 1 further comprising a cavity formed in the substrate, wherein the beam deflects according to difference between pressure inside the cavity and pressure outside the cavity.

3. The device of claim 1, wherein the substrate is a silicon substrate and the piezo-resistive sensing elements are doped into the silicon substrate.

4. The device of claim 1, wherein the piezo-resistive sensing elements form a first pair of piezo-electric sensing elements, further comprising a second pair of piezo-resistive sensing elements for detecting temperature.

5. The device of claim 4, wherein the two pairs of piezo-resistive sensing elements are formed on the same surface of the substrate.

6. The device of claim 1 further comprising:

bond pads on the substrate; and

aluminum connections between the piezo-resistive sensing elements and the bond pads.

7. The device of claim 1 further comprising a piezo resistor formed on the substrate for temperature measurement.

8. The device of claim 1 further comprising a p-n diode formed on the substrate for temperature measurement.

9. The device of claim 1, wherein the beam has a fixed end and a free end, the fixed end being coupled to the piezo-resistive sensing elements.

10. The device of claim 1, wherein the beam has two fixed ends.

11. The device of claim 1, wherein the beam has a uniform cross-section through its length.

12. A sensor comprising:

a flexible material having an electrical interface;

a sensing device mounted on the flexible material, the sensing device, the sensing device having a thickness of less than about 100 μ

m and including;

a planar substrate characterized by a plane;

a cavity formed in the substrate;

a beam formed on the substrate, the beam being capable of deflection in the plane of the substrate into the cavity in response to different pressures applied to the beam, wherein the beam deflects according to a difference between a first pressure on a first side of the beam inside the cavity and a second pressure on a second side of the beam outside the cavity in a space outside the sensing device;

one or more piezo-resistive sensing elements coupled to the beam, wherein the piezo-resistive sensing elements detect beam deflection responsive to a gas flow outside the cavity adjacent the second side and generate an electrical signal as a function of the beam deflection; and

one or more bond pads coupled to the piezo-resistive sensing elements.

13. A method of fabricating a sensing device, the method comprising:

providing a planar substrate characterized by a plane;

forming a beam on the substrate, the beam configured to deflect in the plane of the substrate into a cavity of the substrate responsive to pressure on different sides of the beam, wherein the beam deflects according to a difference between a first pressure on a first side of the beam inside the cavity and a second pressure on a second side of the beam outside the cavity in a space outside the sensing device; and

forming one or more piezo-resistive sensing elements coupled to the beam, wherein the piezo-resistive sensing elements detect beam deflection responsive to a gas flow outside the cavity adjacent the second side and generate an electrical signal as a function of beam deflection;

wherein the sensing device fabricated by the method has a thickness of less than about 100 μ

m.

14. The method of claim 13 further comprising etching the substrate to form a cavity so that the piezo-resistive sensing elements detect pressure difference between inside the cavity and outside the cavity.

15. The method of claim 13 further comprising doping a different portion of the substrate to form a temperature-sensing piezo-resistor.

16. The method of claim 13, wherein the piezo-resistive sensing elements are a first pair of piezo-resistive sensing elements, further comprising doping another portion of the substrate to form a second pair of piezo-resistive sensing elements for temperature measurement.

17. The method of claim 16 further comprising forming the two pairs of piezo-resistive sensing elements on the same surface of the substrate.