Organic light emitting display and method of manufacturing the same
First Claim
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1. A method of manufacturing an organic light emitting display, the method comprising:
- forming a gate electrode and a lower electrode on a substrate;
forming a first insulating layer over the gate electrode and the lower electrode;
forming an oxide semiconductor layer on the first insulating layer;
patterning the oxide semiconductor layer to form an active layer on the first insulating layer over the gate electrode and to form an upper electrode on the first insulating layer over the lower electrode;
forming a second insulating layer over the active layer and the upper electrode;
forming source and drain electrodes coupled to the active layer on the second insulating layer;
forming a third insulating layer comprising an organic material over the source and drain electrodes;
patterning the third insulating layer to expose at least one of the source and drain electrodes;
bathing the third insulating layer and the exposed portion of the exposed electrode with a solution including H;
forming a first electrode coupled to the source or drain electrode on the third insulating layer;
forming a pixel defining layer over the first electrode, wherein the pixel defining layer has an opening exposing the first electrode in an emission region;
forming an organic light emitting layer on the exposed first electrode; and
forming a second electrode on the organic light emitting layer.
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Abstract
An organic light emitting display is disclosed. The display has a pixel which includes a transistor and a capacitor. The active layer of the transistor and at least one of the electrodes of the capacitor comprise a semiconductor oxide.
31 Citations
12 Claims
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1. A method of manufacturing an organic light emitting display, the method comprising:
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forming a gate electrode and a lower electrode on a substrate; forming a first insulating layer over the gate electrode and the lower electrode; forming an oxide semiconductor layer on the first insulating layer; patterning the oxide semiconductor layer to form an active layer on the first insulating layer over the gate electrode and to form an upper electrode on the first insulating layer over the lower electrode; forming a second insulating layer over the active layer and the upper electrode; forming source and drain electrodes coupled to the active layer on the second insulating layer; forming a third insulating layer comprising an organic material over the source and drain electrodes; patterning the third insulating layer to expose at least one of the source and drain electrodes; bathing the third insulating layer and the exposed portion of the exposed electrode with a solution including H; forming a first electrode coupled to the source or drain electrode on the third insulating layer; forming a pixel defining layer over the first electrode, wherein the pixel defining layer has an opening exposing the first electrode in an emission region; forming an organic light emitting layer on the exposed first electrode; and forming a second electrode on the organic light emitting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification
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Current AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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Original AssigneeSamsung Display Company Limited (Samsung Electronics Co. Ltd.)
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InventorsKang, Ki-Nyeng, Pyo, Young-Shin, Jin, Dong-Un
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Primary Examiner(s)WILCZEWSKI, MARY A
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Application NumberUS12/833,857Publication NumberTime in Patent Office984 DaysField of Search438/23, 438/29, 438/34, 438/104, 438/155, 438/158, 438/162, 438/45, 257/57, 257/E29.094, 257/E29.095, 257/E33.019, 257/E33.053, 257/E51.018US Class Current438/45CPC Class CodesH01L 27/1225 with semiconductor material...H10K 59/1213 the pixel elements being TFTsH10K 59/1216 the pixel elements being ca...
