Bifacial cell with extruded gridline metallization
First Claim
1. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer, one or more doped regions, a first surface, a second surface, and a plurality of conductive lines disposed over the first surface and the second surface and contacting one or more doped regions at the first surface and the second surface, the method comprising:
- forming a blanket passivation layer on each of the first surface and the second surface of the semiconductor; and
utilizing a direct-write metallization apparatus arrangement to deposit the plurality of conductive lines over the blanket passivation layer such that each of the plurality of conductive lines electrically contacts an associated doped region of the one or more doped regions the semiconductor layer,wherein utilizing the direct-write metallization apparatus arrangement to deposit the plurality of conductive lines further comprises forming said conductive lines such that all of said conductive lines cover less than 10% of the first surface and the second surface.
2 Assignments
0 Petitions
Accused Products
Abstract
Provided is a bifacial photovoltaic arrangement comprising a bifacial cell which included a semiconductor layer having a first surface and a second surface, a first passivation layer formed on the first surface of the semiconductor layer and a second passivation layer formed on the second surface of the semiconductor layer, and a plurality of metallizations formed on the first and second passivation layers and selectively connected to the semiconductor layer. At least some of the metallizations on the bifacial photovoltaic arrangement comprising an elongated metal structure having a relatively small width and a relatively large height extending upward from the first and second passivation layers.
205 Citations
20 Claims
-
1. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer, one or more doped regions, a first surface, a second surface, and a plurality of conductive lines disposed over the first surface and the second surface and contacting one or more doped regions at the first surface and the second surface, the method comprising:
-
forming a blanket passivation layer on each of the first surface and the second surface of the semiconductor; and utilizing a direct-write metallization apparatus arrangement to deposit the plurality of conductive lines over the blanket passivation layer such that each of the plurality of conductive lines electrically contacts an associated doped region of the one or more doped regions the semiconductor layer, wherein utilizing the direct-write metallization apparatus arrangement to deposit the plurality of conductive lines further comprises forming said conductive lines such that all of said conductive lines cover less than 10% of the first surface and the second surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 17)
-
-
14. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer having one or more doped regions, and opposing first and second surfaces, the method comprising:
-
forming a first blanket passivation layer on the first surface and a second blanket passivation layer on the second surface; utilizing a direct-write metallization apparatus to form a plurality of first conductive lines that extend over the first blanket passivation layer and electrically contact associated doped regions of the one or more doped regions through the first surface; and utilizing the direct-write metallization apparatus to form a plurality of second conductive lines that extend over the second blanket passivation layer and electrically contact associated doped regions of the one or more doped regions through the second surface, wherein utilizing the direct-write metallization apparatus to form the plurality of first and second conductive lines further comprises forming said first and second conductive lines such that all of said first and second conductive lines cover less than 10% of the first surface and the second surface. - View Dependent Claims (16, 18, 19)
-
-
20. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer having opposing first and second surfaces, the method comprising:
-
forming a first blanket passivation layer on the first surface and a second blanket passivation layer on the second surface; utilizing a non-contact patterning apparatus to define a plurality of first openings through the first passivation layer to the first surface and a plurality of second openings through the second passivation layer to the second surface; utilizing a direct-write metallization apparatus to deposit a plurality of first contact portions into the plurality of first openings and a plurality of second contact portions into the plurality of second openings; and utilizing the direct-write metallization apparatus to deposit a plurality of first conductive lines such that each said first conductive line contacts a corresponding group of said plurality of first contact portions, and to deposit a plurality of second conductive lines such that each said second conductive line contacts a corresponding group of said plurality of second contact portions, wherein utilizing the direct-write metallization apparatus to deposit a plurality of first conductive lines further comprises forming said conductive lines such that all of said conductive lines cover less than 10% of the first surface and the second surface.
-
Specification