Through-silicon via with low-K dielectric liner
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- providing a substrate, the substrate having a first side and a second side opposite the first side;
forming an opening extending from the first side of the substrate into the substrate;
forming a first liner along sidewalls of the opening;
forming a conductive material over the first liner in the opening;
thinning the second side of the substrate, thereby exposing at least a portion of the first liner;
removing at least a portion of the first liner interposed between the conductive material and the substrate and removing at least a portion of the first liner extending over a dielectric layer on the first side of the substrate; and
forming, after the removing, a second liner interposed between the conductive material and the substrate and extending over at least a portion of the dielectric layer formed on the first side of the substrate.
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Abstract
A semiconductor substrate having a through-silicon via with an air gap interposed between the through-silicon via and the semiconductor substrate is provided. An opening is formed partially through the semiconductor substrate. The opening is first lined with a first liner and then the opening is filled with a conductive material. A backside of the semiconductor substrate is thinned to expose the first liner, which is subsequently removed and a second liner formed with a low-k or extra low-k dielectric is formed in its place.
66 Citations
5 Claims
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1. A method of forming a semiconductor device, the method comprising:
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providing a substrate, the substrate having a first side and a second side opposite the first side; forming an opening extending from the first side of the substrate into the substrate; forming a first liner along sidewalls of the opening; forming a conductive material over the first liner in the opening; thinning the second side of the substrate, thereby exposing at least a portion of the first liner; removing at least a portion of the first liner interposed between the conductive material and the substrate and removing at least a portion of the first liner extending over a dielectric layer on the first side of the substrate; and forming, after the removing, a second liner interposed between the conductive material and the substrate and extending over at least a portion of the dielectric layer formed on the first side of the substrate. - View Dependent Claims (2, 3, 4, 5)
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Specification