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Semiconductor light emitting device and light emitting apparatus having thereof

  • US 8,399,890 B2
  • Filed: 10/16/2009
  • Issued: 03/19/2013
  • Est. Priority Date: 10/17/2008
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • n (n≧

    2) light emitting structures including a plurality of compound semiconductor layers and spaced apart from each other;

    a second electrode connected to a first light emitting structure of the n light emitting structures;

    a plurality of ohmic contact layers disposed under each of the light emitting structures;

    a first insulating layer disposed under the plurality of ohmic contact layers;

    a second insulating layer insulating between the light emitting structures;

    an interconnection layer connecting the light emitting structures to each other in series; and

    an electrode layer disposed under the first insulating layer, the electrode layer including a portion electrically and directly connected to the ohmic contact layer disposed under an nth light emitting structure of the n light emitting structures,wherein the first insulating layer directly contacts the plurality of ohmic contact layers.

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