Semiconductor light emitting device and light emitting apparatus having thereof

• US 8,399,890 B2
• Filed: 10/16/2009
• Issued: 03/19/2013
• Est. Priority Date: 10/17/2008
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee
• Primary Examiner(s): Le, Thao
• Assistant Examiner(s): GORDON, MATTHEW E
• Application Number:
  US12/580,771
• Publication Number:
  US 20100096646A1
• Time in Patent Office: 1,250 Days
• Field of Search: 257/88, 257/93, 257/E27.119, 438/28
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H05B 45/42 Antiparallel configurations

Abstract

Embodiments relate to a semiconductor light emitting device and a light emitting apparatus comprising the same. The semiconductor light emitting device according to embodiments comprises a plurality of light emitting cells comprising a plurality of compound semiconductor layers; a plurality of ohmic contact layers on the light emitting cells; a first insulating layer on the ohmic contact layer; a second electrode layer electrically connected to a first light emitting cell of the light emitting cells; and a plurality of interconnection layers connecting the light emitting cells in series.

Claims

1. A semiconductor light emitting device comprising:

n (n≧

2) light emitting structures including a plurality of compound semiconductor layers and spaced apart from each other;

a second electrode connected to a first light emitting structure of the n light emitting structures;

a plurality of ohmic contact layers disposed under each of the light emitting structures;

a first insulating layer disposed under the plurality of ohmic contact layers;

a second insulating layer insulating between the light emitting structures;

an interconnection layer connecting the light emitting structures to each other in series; and

an electrode layer disposed under the first insulating layer, the electrode layer including a portion electrically and directly connected to the ohmic contact layer disposed under an n^th light emitting structure of the n light emitting structures,

wherein the first insulating layer directly contacts the plurality of ohmic contact layers.

2. The semiconductor light emitting device of claim 1, wherein the electrode layer includes at least one selected from the group consisting of Al, Ag, Pd, Rh, and Pt, or alloy thereof.

3. The semiconductor light emitting device of claim 1, further comprising a conductive support member disposed under the electrode layer.

4. The semiconductor light emitting device of claim 1, wherein each light emitting structure includes a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer.

5. The semiconductor light emitting device of claim 4, wherein the second insulating layer extends from one sidewall of each light emitting structure to one sidewall of the ohmic contact layer disposed under each light emitting structure, and wherein the interconnection layer is disposed on the second insulating layer and connects the ohmic contact layer disposed under a second light emitting structure to the first conductive type semiconductor layer of a third light emitting structure among the adjacent second and third light emitting structures.

6. The semiconductor light emitting device of claim 1, further comprising a first electrode on the ohmic contact layer disposed under the n^th light emitting structure.

7. The semiconductor light emitting device of claim 1, wherein the ohmic contact layer includes at least one selected from the group consisting of ITO, Pt, Ni, Au, Rh, and Pd, or a mixture thereof.

8. The semiconductor light emitting device of claim 1, wherein each of the ohmic contact layers extends beyond an outer side of a sidewall of each of the light emitting structures and connected to at least a portion of the interconnection layer.

9. The semiconductor light emitting device of claim 4, wherein the first conductive type semiconductor layer includes an n type semiconductor layer, and the second conductive type semiconductor layer includes a p type semiconductor layer.

10. The semiconductor light emitting device of claim 3, wherein the conductive support member includes at least one selected from the group consisting of copper, gold, and a carrier wafer.

11. The semiconductor light emitting device of claim 1, wherein one end of an AC power supply is provided through the electrode layer connected to the ohmic contact layer disposed under the n^th light emitting structure of the n light emitting structures, and the other end of the AC power supply is connected to the second electrode connected to the first light emitting structure.

12. The semiconductor light emitting device of claim 4, wherein the second electrode is disposed on the first conductive type semiconductor layer.

13. A light emitting apparatus comprising:

a plurality of semiconductor light emitting devices including a first semiconductor light emitting device and a second semiconductor light emitting device connected to the first semiconductor light emitting device in antiparallel; and

a connection member connecting the first semiconductor light emitting device to the second semiconductor light emitting device,

wherein the first and second semiconductor light emitting devices include;

n (n≧

2) light emitting structures including a plurality of compound semiconductor layers and spaced apart from each other;

a second electrode connected to a first light emitting structure of the n light emitting structures;

a plurality of ohmic contact layers disposed under each of the light emitting structures;

a first insulating layer disposed under the plurality of ohmic contact layers;

a second insulating layer insulating between the light emitting structures;

an interconnection layer connecting the light emitting structures to each other in series; and

an electrode layer disposed under the first insulating layer, the electrode layer including a portion electrically and directly connected to the ohmic contact layer disposed under an n^th light emitting structure of the n light emitting structures, and

wherein power is supplied to the second electrode and the electrode layer in the first and second semiconductor light emitting devices,

wherein the first insulating layer directly contacts the plurality of ohmic contact layers.

14. The light emitting apparatus of claim 13, wherein the second electrode and the electrode layer in the first and second semiconductor light emitting devices are connected to each other in antiparallel by the connection member.

15. The light emitting apparatus of claim 13, wherein the connection member includes one of an interconnection pattern, a lead frame, or an electrode layer.

16. The light emitting apparatus of claim 13, further comprising a package including a package body having a lead frame or an electrode layer on which the first and second semiconductor light emitting devices are mounted.

17. The light emitting device of claim 16, wherein the package body includes a cavity, in which the first and second semiconductor light emitting devices are disposed, and a resin member disposed in the cavity.

18. The light emitting device of claim 13, wherein sum of driving voltages of the light emitting structures of the first and second semiconductor light emitting devices are identical to input AC voltage.

19. The light emitting device of claim 13, further comprising a resistor or a rectifier connected to both terminals of the first and second semiconductor light emitting devices to supply AC power to the both terminals of the first and second semiconductor light emitting devices.