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Light emitting device

  • US 8,399,901 B2
  • Filed: 01/09/2009
  • Issued: 03/19/2013
  • Est. Priority Date: 01/11/2008
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a light emitting semiconductor layer comprising a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer;

    an electrode layer on the first conductive semiconductor layer;

    a first passivation layer on the light emitting semiconductor layer; and

    a second passivation layer on the first passivation layer,wherein the first passivation layer comprises an inorganic material,wherein the second passivation layer comprises an organic material,wherein the first conductive semiconductor layer has a top surface that has a downwardly-recessed groove, a plurality of protrusions being disposed on a bottom surface of the groove,wherein the electrode layer is disposed on a bottom surface of the groove, andwherein the electrode layer substantially has the same top surface as that of the top surface of the first conductive semiconductor layer.

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