AlGaInP-based light-emitting diode with double reflective layers and fabrication method thereof
First Claim
1. An AlGaInP-based light-emitting diode (LED) with double reflective layers, comprising:
- an epitaxial layer;
a distributed Bragg reflector formed on a top of the epitaxial layer, wherein the arrangement of the distributed Bragg reflector is grid-like with a portion of the top of the epitaxial layer exposed;
a reflective metal layer formed on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer;
a permanent substrate formed on the reflective metal layer;
a first electrode formed on a bottom of the epitaxial layer; and
a second electrode formed on the permanent substrate.
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Accused Products
Abstract
The invention discloses an AlGaInP-based LED with double reflective layers and a fabrication method thereof. The method includes: providing a temporary substrate; forming an epitaxial layer on a front of the temporary substrate; forming a distributed Bragg reflector on the epitaxial layer; forming an some openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a portion of a top of the epitaxial layer is exposed; forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer, to fill the openings; bonding a permanent substrate onto the reflective metal layer; removing the temporary substrate; forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and dicing to obtain the AlGaInP-based LED chips. The AlGaInP-based LED with both the distributed Bragg reflector and the reflective metal layer according to the invention can fully utilize good reflectivity of the reflective layers to the extreme, and improve the light-emission efficiency of the AlGaInP-based LED effectively.
25 Citations
18 Claims
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1. An AlGaInP-based light-emitting diode (LED) with double reflective layers, comprising:
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an epitaxial layer; a distributed Bragg reflector formed on a top of the epitaxial layer, wherein the arrangement of the distributed Bragg reflector is grid-like with a portion of the top of the epitaxial layer exposed; a reflective metal layer formed on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer; a permanent substrate formed on the reflective metal layer; a first electrode formed on a bottom of the epitaxial layer; and a second electrode formed on the permanent substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for fabricating an AlGaInP-based light-emitting diode (LED) with double reflective layers, comprising:
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1) providing a temporary substrate; 2) forming an epitaxial layer on the temporary substrate; 3) forming a distributed Bragg reflector on the epitaxial layer; 4) forming a plurality of openings in the distributed Bragg reflector, such that the arrangement of the distributed Bragg reflector is grid-like and a top of the epitaxial layer is partially exposed; 5) forming a reflective metal layer on the distributed Bragg reflector and on the exposed portion of the top of the epitaxial layer; 6) bonding a permanent substrate with the reflective metal layer; 7) removing the temporary substrate; 8) forming a first electrode and a second electrode at a bottom of the epitaxial layer and a top of the permanent substrate, respectively; and 9) dicing to obtain AlGaInP-based LED chips. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification