Independently accessed double-gate and tri-gate transistors
First Claim
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1. An integrated circuit comprising:
- a substrate;
a tri-gate transistor on the substrate having a body surrounded on three sides by a first metal gate; and
an independently accessed, double-gate transistor on the substrate having a body having two independent metal gates on opposite sides of the body.
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Abstract
A method for fabricating double-gate and tri-gate transistors in the same process flow is described. In one embodiment, a sacrificial layer is formed over stacks that include semiconductor bodies and insulative members. The sacrificial layer is planarized prior to forming gate-defining members. After forming the gate-defining members, remaining insulative member portions are removed from above the semiconductor body of the tri-gate device but not the I-gate device. This facilitates the formation of metallization on three sides of the tri-gate device, and the formation of independent gates for the I-gate device.
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Citations
6 Claims
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1. An integrated circuit comprising:
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a substrate; a tri-gate transistor on the substrate having a body surrounded on three sides by a first metal gate; and an independently accessed, double-gate transistor on the substrate having a body having two independent metal gates on opposite sides of the body. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification