Via-less thin film resistor with a dielectric cap
First Claim
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1. A method, comprising:
- forming a first interconnect spaced from a second interconnect over a substrate, the forming comprising;
forming a first conductor over the substrate;
forming a second conductor over the first conductor; and
defining the first and second interconnects by removing portions of the first and second conductors and forming first and second sidewalls of the first and second interconnects, respectively, the first and second sidewalls being transverse to the substrate;
forming a resistive layer over the first and second interconnects;
forming a dielectric cap layer over the resistive layer; and
forming a capped thin film resistor electrically connecting a first remaining portion of the first conductor in the first interconnect to a second remaining portion of the first conductor in the second interconnect, the forming including removing portions of the resistive layer and the dielectric cap layer.
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Abstract
The present disclosure is directed to a thin film resistor structure that includes a resistive element electrically connecting first conductor layers of adjacent interconnect structures. The resistive element is covered by a dielectric cap layer that acts as a stabilizer and heat sink for the resistive element. Each interconnect includes a second conductor layer over the first conductive layer. The thin film resistor includes a chromium silicon resistive element covered by a silicon nitride cap layer.
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Citations
22 Claims
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1. A method, comprising:
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forming a first interconnect spaced from a second interconnect over a substrate, the forming comprising; forming a first conductor over the substrate; forming a second conductor over the first conductor; and defining the first and second interconnects by removing portions of the first and second conductors and forming first and second sidewalls of the first and second interconnects, respectively, the first and second sidewalls being transverse to the substrate; forming a resistive layer over the first and second interconnects; forming a dielectric cap layer over the resistive layer; and forming a capped thin film resistor electrically connecting a first remaining portion of the first conductor in the first interconnect to a second remaining portion of the first conductor in the second interconnect, the forming including removing portions of the resistive layer and the dielectric cap layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 19, 20)
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8. A method, comprising:
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forming a first conductive layer over a substrate; forming a second conductive layer over the first conductive layer; removing portions of the first and second conductive layers to form a first interconnect structure and a second interconnect structure spaced from the first interconnect structure over the substrate, each interconnect structure including a respective portion of the first conductive layer and a respective portion of the second conductive layer; forming a resistive layer over the first and second interconnect structures and the substrate; and defining a thin film resistor electrically connecting sidewalls of the first conductive layers of the first and second interconnect structures to each other, the defining including removing portions of the resistive layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method, comprising:
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forming first and second interconnect structures over a substrate of an integrated circuit die, each interconnect structure having a first conductor layer; forming a resistive layer over the substrate electrically connecting sidewalls of the first conductor layers of the first and second interconnect structures together; defining a thin film resistor between first and second interconnect structures by removing portions of the resistive layer; forming a dielectric layer over the first and second interconnect structures and the thin film resistor; forming conductive vias through the dielectric layer to the first and second interconnect structures; and forming a third and a fourth interconnect structure coupled to the first and second interconnect structures, respectively, through the vias. - View Dependent Claims (15, 16, 17, 18)
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21. A method, comprising:
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forming first and second interconnect structures over a substrate of an integrated circuit die, each interconnect structure having a first conductor layer; forming a resistive layer over the substrate electrically connecting sidewalls of the first conductor layers of the first and second interconnect structures together; defining a thin film resistor between first and second interconnect structures by removing portions of the resistive layer, the removing including; forming a photoresist layer over portions of a top surface of the first and second interconnect structures and over a portion of the substrate between the first and second interconnect structures; and etching the resistive layer to expose the substrate not covered by the photoresist layer. - View Dependent Claims (22)
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Specification