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Device to program adjacent storage cells of different NROM cells

  • US 8,400,841 B2
  • Filed: 06/15/2005
  • Issued: 03/19/2013
  • Est. Priority Date: 06/15/2005
  • Status: Active Grant
First Claim
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1. A nitride read only memory (NROM) non-volatile memory device comprising:

  • an array of charge trapping type memory cells connected to word lines and local bit lines;

    said array comprising global bit lines, select transistors connecting said global bit lines to said local bit lines and select lines to activate said select transistors;

    circuitry for programming at generally a same time two adjacent storage areas of two different NROM cells which share a local bit line and for reading at generally a same time said two adjacent storage areas;

    wherein programming comprises concurrently applying the same programming pulse to the two adjacent storage areas, and wherein said select transistors are organized such that any set of three consecutive local bit lines are connected to three different global bit lines.

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