Light-emitting device
First Claim
1. A light-emitting device comprising:
- a light-emitting stacked layer having first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;
a first planarization layer formed on a first part of the second conductivity type semiconductor layer;
a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer;
a first electrode formed on the first portion of the first transparent conductive oxide layer; and
a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.
1 Assignment
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Accused Products
Abstract
A light-emitting device including: a light-emitting stacked layer having first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface; a first planarization layer formed on a first partial of the upper surface of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second partial of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer.
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Citations
19 Claims
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1. A light-emitting device comprising:
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a light-emitting stacked layer having first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; a first electrode formed on the first portion of the first transparent conductive oxide layer; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 15, 16, 17, 19)
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8. A light-emitting device comprising:
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a light-emitting stacked layer having first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; and a first electrode formed on the first portion of the first transparent conductive oxide layer, wherein the first transparent conductive oxide layer further has a secondary branch not covered by the first electrode and extended toward an end of the light emitting device. - View Dependent Claims (9)
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10. A light-emitting device comprising:
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a light-emitting stacked layer having first conductivity type semiconductor layer;
a light-emitting layer formed on the first conductivity type semiconductor layer; and
a second conductivity type semiconductor layer formed on the light-emitting layer, wherein the upper surface of the second conductivity type semiconductor layer is a textured surface;a first planarization layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first planarization layer and a second part of the second conductivity type semiconductor layer, including a first portion in contact with the first planarization layer and a second portion having a first plurality of cavities in contact with the second conductivity type semiconductor layer; a first electrode formed on the first portion of the first transparent conductive oxide layer; and a second planarization layer formed on a first part of the upper surface of the first conductivity type semiconductor layer and a second transparent conductive oxide layer formed on the second planarization layer and a second part of the first conductivity type semiconductor layer, the second transparent conductive oxide layer including a first portion in contact with the second planarization layer and a second portion having a third plurality of cavities in contact with the first conductivity type semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 18)
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Specification