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Magnetic tunnel junction device

DC
  • US 8,405,134 B2
  • Filed: 02/20/2012
  • Issued: 03/26/2013
  • Est. Priority Date: 03/12/2004
  • Status: Active Grant
First Claim
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1. A magnetoresistive device having a tunnel barrier junction structure, the magnetoresistive device comprising:

  • a first ferromagnetic material layer deposited on a substrate;

    a second ferromagnetic material layer; and

    a tunnel barrier layer located between the first and second ferromagnetic material layers, andwherein said tunnel barrier layer comprises a single-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented or a poly-crystalline magnesium oxide in which (001) crystal plane is preferentially oriented, andat least said first ferromagnetic material layer is crystallized and comprises CoFeB alloy.

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