×

Semiconductor memory device

  • US 8,405,142 B2
  • Filed: 03/09/2011
  • Issued: 03/26/2013
  • Est. Priority Date: 09/22/2010
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor memory device comprising:

  • a substrate;

    a multilayer body provided on the substrate, with a plurality of insulating films and electrode films alternately stacked, including a valley made of a pair of staircases opposed to each other and including a terrace for each of the electrode films, and being not full divided by the valley;

    a first contact connected to a portion of the each of the electrode films constituting the terrace of one of the staircases;

    a second contact connected to a portion of the each of the electrode films constituting the terrace of another of the staircases;

    an interconnection connected to the first contact and the second contact;

    a semiconductor member provided in a portion of the multilayer body on a side of the first contact as viewed from the valley, the semiconductor member extending in a stacking direction of the insulating films and the electrode films; and

    a charge storage layer provided between the each of the electrode films and the semiconductor member.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×