Component arrangement including a MOS transistor having a field electrode

• US 8,405,146 B2
• Filed: 05/04/2010
• Issued: 03/26/2013
• Est. Priority Date: 01/29/2007
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Willmeroth, Armin, Hirler, Franz
• Primary Examiner(s): Fahmy, Wael
• Assistant Examiner(s): SALERNO, SARAH KATE
• Application Number:
  US12/773,580
• Publication Number:
  US 20100213506A1
• Time in Patent Office: 1,057 Days
• Field of Search: 257/340, 257/577, 257/E29.007
• US Class Current: 257/340
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/402 Field plates
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7816 Lateral DMOS transistors, i.e. LDMOS transistors
• CPC Class Codes: H01L 29/7825 with trench gate electrode trench gate electrodes per se H01L29/4236
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 2017/6878 using multi-gate field-effect transistors

Abstract

A component arrangement including a MOS transistor having a field electrode is disclosed. One embodiment includes a gate electrode, a drift zone and a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer a charging circuit, having a rectifier element connected between the gate electrode and the field electrode.

Claims

1. A component arrangement comprising:

a MOS transistor having a gate electrode;

a drift zone;

a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer;

a charging circuit, having a rectifier element connected between the gate electrode and the field electrode,

wherein the MOS transistor is integrated in a semiconductor body, and the gate electrode and the field electrode are arranged in a common trench in the semiconductor body;

wherein the MOS transistor has a source zone, and the charging circuit has a capacitive storage element connected between the field electrode and the source zone; and

wherein the capacitive storage element is arranged in the trench.

2. The component arrangement of claim 1, wherein the capacitive storage element has a first and a second electrode and a storage dielectric arranged between the first and second electrode.

3. The component arrangement of claim 2, wherein the first electrode of the capacitive storage element is formed by the field electrode.

4. The component arrangement of claim 3, wherein the second electrode of the capacitive storage element is arranged within the trench between the gate electrode and the field electrode.

5. The component arrangement of claim 1, wherein the MOS transistor is a MOSFET.

6. The component arrangement of claim 1, comprising wherein the MOS transistor is realized as an IGBT.

7. The component arrangement of claim 1, in which the MOS transistor is realized as a vertical transistor, in which a current flow direction in the drift zone runs in a vertical direction of the semiconductor body.

8. The component arrangement of claim 1, comprising wherein the MOS transistor is a lateral transistor, a current flow direction in the drift zone runs in a lateral direction of the semiconductor body.

9. The component arrangement of claim 1, wherein the rectifier element is polarized in such a way that the field electrode, when the component is driven in the on state, is charged with a charge suitable for forming an accumulation channel in the drift zone.

10. An integrated circuit comprising:

a semiconductor body;

a MOS transistor having a gate electrode;

a drift zone;

a field electrode, arranged adjacent to the drift zone and dielectrically insulated from the drift zone by a dielectric layer;

a charging circuit, having a rectifier element connected between the gate electrode and the field electrode;

one or more additional electrical components;

wherein the MOS transistor is integrated in the semiconductor body, and the gate electrode and the field electrode are arranged in a common trench in the semiconductor body;

wherein the MOS transistor has a source zone, and the charging circuit has a capacitive storage element connected between the field electrode and the source zone; and

wherein the capacitive storage element is arranged in the trench.

11. The integrated circuit of claim 10, wherein the capacitive storage element has a first and a second electrode and a storage dielectric arranged between the first and second electrode.

12. The integrated circuit of claim 11, wherein the first electrode of the capacitive storage element is formed by the field electrode.