Trench schottky diode and method for manufacturing the same

• US 8,405,184 B2
• Filed: 06/28/2010
• Issued: 03/26/2013
• Est. Priority Date: 06/26/2009
• Status: Active Grant

• Current Assignee: PFC Device Holdings Ltd. (PFC Device, Inc.)
• Original Assignee: PFC Device Corp. (PFC Device, Inc.)
• Inventors: Kuo, Hung-Hsin, Su, Tse-Chuan, Chen, Mei-Ling, Chao, Kou-Liang
• Primary Examiner(s): STARK, JARRETT J
• Application Number:
  US12/824,539
• Publication Number:
  US 20100327288A1
• Time in Patent Office: 1,002 Days
• Field of Search: 257/483, 257/484, 257/E21.358, 257/E21.359, 257/E27.051, 257/E29.338, 438/576, 438/570
• US Class Current: 257/483
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.

Claims

1. A trench Schottky diode comprising:

a semiconductor substrate having a first plurality of trenches and a second plurality of trenches;

a first plurality of gate oxide layers correspondingly formed on surfaces of the first plurality of trenches and protruding above a first surface of the semiconductor substrate;

a second plurality of gate oxide layers correspondingly formed on surfaces of the second plurality of trenches and protruding above a first surface of the semiconductor substrate;

a first plurality of polysilicon structures correspondingly filled in the first plurality of trenches and protruding above the first surface of the semiconductor substrate;

a second plurality of polysilicon structures correspondingly filled in the second plurality of trenches and protruding above the first surface of the semiconductor substrate;

a first masking layer on a portion of the first surface among the first plurality of trenches and covering the first surface among the first plurality of trenches and the first plurality of gate oxide layer;

a second masking layer on said first masking layer and said first plurality of polysililcon structure, and completely covering the first masking layer; and

an electrode formed on the guard ring, the other portion of the first surface, the second number of the protruding polysilicon structures and the second number of the protruding gate oxide layers.

2. The trench Schottky diode according to claim 1 wherein the first type semiconductor substrate comprises a n type relatively heavily-doped silicon substrate and a n type relatively lightly-doped epitaxial layer wherein the trenches are formed in the n type relatively lightly-doped epitaxial layer.

3. The trench Schottky diode according to claim 1 wherein the guard ring comprises a mask layer formed on the portion of the first surface.

4. The trench Schottky diode according to claim 3 wherein the mask layer is a silicon oxide layer formed by a thermal oxidation process or a CVD process.

5. The trench Schottky diode according to claim 1 wherein the polysilicon structures are implanted with boron or phosphorous ions.

6. The trench Schottky diode according to claim 1 wherein the guard ring further comprises a protective layer made of a BPSG layer formed by a CVD process and a contact dry etching process.

7. The trench Schottky diode according to claim 1 wherein the electrode includes a first metal layer and a second metal layer formed on the first metal layer.

8. The trench Schottky diode according to claim 7 wherein the first metal layer is made of Ti, and the second metal layer is made of an Al/Si/Cu alloy.