Large emission area light-emitting devices
First Claim
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1. A light-emitting device, comprising:
- a multi-layer stack comprising III-V semiconductor materials including a light-generating region comprising at least one quantum well and a first layer supported by the light-generating region, anda layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material;
wherein a surface of the first layer is configured so that at least 60% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, andwherein the first layer has a first edge which is at least one millimeter long and a second edge which is at least one millimeter long.
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Abstract
Light-emitting devices, and related components, systems and methods are disclosed.
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Citations
13 Claims
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1. A light-emitting device, comprising:
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a multi-layer stack comprising III-V semiconductor materials including a light-generating region comprising at least one quantum well and a first layer supported by the light-generating region, and a layer of reflective material capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material; wherein a surface of the first layer is configured so that at least 60% of a total amount of light generated by the light-generating region emerges via the surface of the first layer, and wherein the first layer has a first edge which is at least one millimeter long and a second edge which is at least one millimeter long. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification