System comprising a semiconductor device and structure
First Claim
1. A mobile device comprising a semiconductor device, the semiconductor device comprising:
- a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said first alignment marks are detectable by a lithography tool to locate the lithography tool with respect to the first single crystal silicon layer; and
a second single crystal silicon layer overlying said at least one metal layer;
wherein said second single crystal silicon layer comprises a plurality of second transistors and second alignment marks, wherein said second alignment marks are detectable by the lithography tool to locate the lithography tool with respect to the second single crystal silicon layer,wherein said second transistors are defined and aligned to said first transistors based on said first alignment marks and said second alignment marks.
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Accused Products
Abstract
A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.
530 Citations
14 Claims
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1. A mobile device comprising a semiconductor device, the semiconductor device comprising:
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a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said first alignment marks are detectable by a lithography tool to locate the lithography tool with respect to the first single crystal silicon layer; and a second single crystal silicon layer overlying said at least one metal layer; wherein said second single crystal silicon layer comprises a plurality of second transistors and second alignment marks, wherein said second alignment marks are detectable by the lithography tool to locate the lithography tool with respect to the second single crystal silicon layer, wherein said second transistors are defined and aligned to said first transistors based on said first alignment marks and said second alignment marks. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A system comprising a semiconductor device, the semiconductor device comprising:
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a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying said first single crystal silicon layer, wherein said at least one metal layer comprises copper or aluminum more than other materials, wherein said first alignment marks are detectable by a lithography tool to locate the lithography tool with respect to the first single crystal silicon layer; and a second single crystal silicon layer overlying said at least one metal layer; wherein said second single crystal silicon layer comprises a plurality of second transistors comprising P type transistors and N type transistors; wherein at least one of said second transistors is defined and aligned to said first alignment marks. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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Specification