Spin-torque based memory device using a magnesium oxide tunnel barrier
First Claim
Patent Images
1. A magnetic tunnel junction stack comprising:
- a pinned magnetic layer;
a tunnel barrier layer formed of magnesium oxide (MgO);
a free magnetic layer adjacent to the tunnel barrier layer; and
a layer consisting of vanadium (V) directly adjacent to the free magnetic layer;
wherein the layer of vanadium (V) is of a predetermined thickness of greater than 10 Angstroms and disposed on one of the top or bottom surface of the magnetic tunnel junction stack.
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Abstract
A magnetic tunnel junction stack including a pinned magnetic layer, a tunnel barrier layer formed of magnesium oxide (MgO), a free magnetic layer adjacent to the tunnel barrier layer, and a layer of vanadium (V) adjacent to the free magnetic layer.
21 Citations
21 Claims
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1. A magnetic tunnel junction stack comprising:
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a pinned magnetic layer; a tunnel barrier layer formed of magnesium oxide (MgO); a free magnetic layer adjacent to the tunnel barrier layer; and a layer consisting of vanadium (V) directly adjacent to the free magnetic layer; wherein the layer of vanadium (V) is of a predetermined thickness of greater than 10 Angstroms and disposed on one of the top or bottom surface of the magnetic tunnel junction stack. - View Dependent Claims (2, 3)
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4. A magnetic tunnel junction stack comprising:
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a pinned magnetic layer; a tunnel barrier layer formed of magnesium oxide (MgO); a free magnetic layer adjacent to the tunnel barrier layer, wherein the free magnetic layer includes a plurality of elements wherein at least one element is vanadium; and a layer consisting of vanadium (V) directly adjacent to the free magnetic layer; wherein the layer of vanadium (V) is of a predetermined thickness of greater than 10 Angstroms and disposed on one of the top or bottom surface of the magnetic tunnel junction stack. - View Dependent Claims (5, 6, 7, 8, 9, 10)
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11. A magnetic random access memory device comprising:
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a magnetic tunnel junction stack including; a pinned magnetic layer; a tunnel barrier layer formed of magnesium oxide (MgO); a free magnetic layer adjacent to the tunnel barrier layer; and a layer consisting of vanadium (V) directly adjacent to the free magnetic layer; wherein the layer of vanadium (V) is of a predetermined thickness of greater than 10 Angstroms and disposed on one of the top or bottom surface of the magnetic tunnel junction stack. - View Dependent Claims (12, 13)
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14. A magnetic random access memory device comprising:
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a magnetic tunnel junction stack including; a pinned magnetic layer; a tunnel barrier layer formed of magnesium oxide (MgO); a free magnetic layer adjacent to the tunnel barrier layer, wherein the free magnetic layer includes a plurality of elements wherein at least one element is vanadium; and a layer consisting of vanadium (V) directly adjacent to the free magnetic layer; wherein the layer of vanadium (V) is of a predetermined thickness of greater than 10 Angstroms and disposed on one of the top or bottom surface of the magnetic tunnel junction stack. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification