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Method and structure for a transistor having a relatively large threshold voltage variation range and for a random number generator incorporating multiple essentially identical transistors having such a large threshold voltage variation range

  • US 8,407,656 B2
  • Filed: 06/24/2011
  • Issued: 03/26/2013
  • Est. Priority Date: 06/24/2011
  • Status: Active Grant
First Claim
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1. A computer-implemented design method comprising:

  • accessing, by a computer from memory, an initial design for a transistor, said transistor having a nominal threshold voltage and a range for threshold voltage variation; and

    altering, by said computer, said initial design for said transistor in order to generate an updated design for said transistor by changing specifications for said transistor so that said range for threshold voltage variation for said transistor is widened as a function of an increase in random dopant fluctuation and so that said nominal threshold voltage of said transistor is retained.

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