Registered structure formation via the application of directed thermal energy to diblock copolymer films

• US 8,409,449 B2
• Filed: 12/27/2011
• Issued: 04/02/2013
• Est. Priority Date: 03/06/2007
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Millward, Dan B., Marsh, Eugene P.
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US13/337,567
• Publication Number:
  US 20120094087A1
• Time in Patent Office: 462 Days
• Field of Search: None
• US Class Current: 216/2
• CPC Class Codes: B81B 1/00 Devices without movable or flexible elements, e.g. microcapillary devices
• CPC Class Codes: B81C 1/00015 for manufacturing microsystems
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002
• CPC Class Codes: B81C 2201/0149 Forming nanoscale microstructures using auto-arranging or self-assembling material
• CPC Class Codes: B81C 2201/0198 for making a masking layer
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C08L 2666/02 Organic macromolecular compounds, natural resins, waxes or and bituminous materials
• CPC Class Codes: C08L 53/00 Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
• CPC Class Codes: G03F 7/0002 Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• CPC Class Codes: Y10S 438/947 Subphotolithographic processing
• CPC Class Codes: Y10S 977/888 Shaping or removal of materials, e.g. etching
• CPC Class Codes: Y10S 977/895 having step or means utilizing chemical property
• CPC Class Codes: Y10S 977/90 having step or means utilizing mechanical or thermal property, e.g. pressure, heat
• CPC Class Codes: Y10T 428/24479 including variation in thickness
• CPC Class Codes: Y10T 428/24612 Composite web or sheet
• CPC Class Codes: Y10T 428/24744 Longitudinal or transverse tubular cavity or cell

Abstract

Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.

Claims

1. A method for forming a polymer material, comprising:

annealing a first block copolymer material within a trench in a substrate to form a base material comprising an ordered array of polymer domains;

forming a second block copolymer material over the base material within the trench and over a substrate surface adjacent the trench; and

selectively annealing a portion of the second block copolymer material overlying the base material relative to another portion of the second block copolymer material overlying the substrate surface adjacent the trench to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.

2. The method of claim 1, further comprising annealing the another portion of the second block copolymer material to form an additional ordered array of polymer domains over the substrate surface adjacent the trench.

3. The method of claim 1, wherein selectively annealing a portion of the second block copolymer material overlying the base material relative to another portion of the second block copolymer material overlying the substrate surface adjacent the trench comprises directing a laser source of short-UV wavelength onto the portion of the second block copolymer material.

4. The method of claim 1, wherein selectively annealing a portion of the second block copolymer material overlying the base material relative to another portion of the second block copolymer material overlying the substrate surface adjacent the trench comprises conducting heat through conductive elements within the substrate and extending a length of the trench.

5. The method of claim 1, further comprising conducting heat through conductive elements within the substrate and lateral to the trench to selectively anneal the another portion of the second block copolymer material.

6. The method of claim 1, wherein selectively annealing a portion of the second block copolymer material overlying the base material relative to another portion of the second block copolymer material overlying the substrate surface adjacent the trench comprises globally applying a heat source to heat an absorptive material or a reflective material only located over a floor of the trench.

7. The method of claim 1, wherein at least one of annealing the first block copolymer material and selectively annealing a portion of the second block copolymer material overlying the base material comprises applying heat to a backside of the substrate.

8. A method for forming a polymer material, comprising:

annealing a first block copolymer material within a trench in a substrate to form a base material comprising an ordered array of polymer domains;

forming a second block copolymer material on the base material; and

annealing only a portion of the second block copolymer material to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.

9. A method for forming a polymer material, comprising:

forming a first block copolymer material on surfaces of a trench in a substrate and on a substrate surface adjacent the trench;

annealing the first block copolymer material to form a base material comprising an ordered array of polymer domains within the trench;

selectively cross-linking the base material within the trench;

removing a non-cross-linked portion of the first block copolymer material on the substrate surface adjacent the trench;

forming a second block copolymer material on the base material within the trench and on the substrate surface adjacent the trench; and

annealing the second block copolymer material only on the base material within the trench to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.

10. A method for forming a polymer material, comprising:

forming a first block copolymer material on surfaces of a trench in a substrate and on a substrate surface adjacent the trench;

annealing the first block copolymer material to form an annealed first block copolymer material on the substrate surface adjacent the trench and a base material comprising an ordered array of polymer domains within the trench;

globally cross-linking the annealed first block copolymer material and the base material;

masking the base material;

removing the annealed first block copolymer material to expose the substrate surface adjacent the tele-trench;

forming a second block copolymer material over the base material and on the exposed substrate surface adjacent the trench; and

annealing the second block copolymer material only overlying the base material to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.

11. The method of claim 10, wherein removing the annealed first block copolymer material comprises subjecting the annealed first block copolymer material to an oxygen plasma treatment.

12. A method of forming a polymer material, comprising:

forming a first block copolymer material in a trench;

annealing the first block copolymer material to form a base material comprising self-assembled polymer domains;

forming a second block copolymer material over at least the base material; and

selectively annealing the second block copolymer material overlying the base material to form additional self-assembled polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.

13. The method of claim 12, wherein forming a first block copolymer material in a trench comprises forming the first block copolymer comprising a lamellar-phase block copolymer in the trench.

14. The method of claim 13, wherein annealing the first block copolymer material to form a base material comprising self-assembled polymer domains comprises forming alternating lamellar domains oriented parallel to sidewalls of the trench and oriented perpendicular to a floor of the trench.

15. The method of claim 12, wherein forming a first block copolymer material in a trench comprises forming the first block copolymer comprising a cylindrical-phase block copolymer in the trench.

16. The method of claim 15, wherein annealing the first block copolymer material to form a base material comprising self-assembled polymer domains comprises forming lines of half-cylinder polymer domains in a polymer matrix, the lines of half-cylinder polymer domains extending parallel to sidewalls and a floor of the trench.

17. The method of claim 12, wherein selectively annealing the second block copolymer material overlying the base material to form additional self-assembled polymer domains comprising polymer domains registered to corresponding polymer domains of the base material comprises forming the additional self-assembled polymer domains to comprise lamellar polymer domains registered to corresponding lamellar polymer domains of the base material.