Methods for forming materials using micro-heaters and electronic devices including such materials
First Claim
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1. A method for forming a material comprising:
- applying energy to a micro-heater to heat the micro-heater;
providing a precursor so as to be in thermal proximity to the micro-heater; and
forming a material from the precursor with the heat from the micro-heater such that the material is formed directly on the micro-heater,wherein the micro-heater includes a substrate, at least one heating element unit on the substrate, a support structure between a portion of the substrate and a portion of the at least one heating element unit,wherein the at least one heating element unit has a configuration that allows two or more heating element units to be repeatedly connected in series,wherein the at least one heating element unit has at least two first regions and a second region, the second region being located between the first regions, and the first regions having a higher light emission and heat generation than the second region, andwherein the support structure is located below a portion of the second region but not below the first regions.
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Abstract
Nano-sized materials and/or polysilicon are formed using heat generated from a micro-heater, the micro-heater may include a substrate, a heating element unit formed on the substrate, and a support structure formed between the substrate and the heating element unit. Two or more of the heating element units may be connected in series.
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Citations
20 Claims
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1. A method for forming a material comprising:
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applying energy to a micro-heater to heat the micro-heater; providing a precursor so as to be in thermal proximity to the micro-heater; and forming a material from the precursor with the heat from the micro-heater such that the material is formed directly on the micro-heater, wherein the micro-heater includes a substrate, at least one heating element unit on the substrate, a support structure between a portion of the substrate and a portion of the at least one heating element unit, wherein the at least one heating element unit has a configuration that allows two or more heating element units to be repeatedly connected in series, wherein the at least one heating element unit has at least two first regions and a second region, the second region being located between the first regions, and the first regions having a higher light emission and heat generation than the second region, and wherein the support structure is located below a portion of the second region but not below the first regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. The electronic device of 18, further comprising:
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a drain electrode; and a source electrode; wherein the drain electrode and the source electrode intersect on a portion of the substrate at right angles and polysilicon is formed on the drain and source electrodes to form a transistor. - View Dependent Claims (20)
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Specification