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Semiconductor device and manufacturing method thereof

  • US 8,410,002 B2
  • Filed: 11/12/2010
  • Issued: 04/02/2013
  • Est. Priority Date: 11/13/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer formed over a substrate;

    a source electrode and a drain electrode formed over the oxide semiconductor layer;

    the source electrode and the drain electrode, each is electrically connected to the oxide semiconductor layer;

    a gate insulating layer formed over the oxide semiconductor layer, the source electrode and the drain electrode; and

    a gate electrode formed over the gate insulating layer,wherein the source electrode and the drain electrode include an oxide region formed by oxidizing a side surface of the source electrode and the drain electrode.

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