LED with current confinement structure and surface roughening
First Claim
1. A light emitting diode (LED) comprising:
- a first layer of semiconductor material having an associated first contact and first surface through which light is emitted;
a second layer of semiconductor material having an associated continuous, metal second contact layer in direct contact with said second layer;
an active region between the first layer and the second layer;
a confinement structure in the continuous, metal second contact layer, the confinement structure being completely surrounded by said continuous, metal second contact layer and directing current flowing toward the active region away from an area of the active region that is substantially coincident with an area of the confinement structure; and
a roughened surface of said light emitting diode.
3 Assignments
0 Petitions
Accused Products
Abstract
An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.
-
Citations
37 Claims
-
1. A light emitting diode (LED) comprising:
-
a first layer of semiconductor material having an associated first contact and first surface through which light is emitted; a second layer of semiconductor material having an associated continuous, metal second contact layer in direct contact with said second layer; an active region between the first layer and the second layer; a confinement structure in the continuous, metal second contact layer, the confinement structure being completely surrounded by said continuous, metal second contact layer and directing current flowing toward the active region away from an area of the active region that is substantially coincident with an area of the confinement structure; and a roughened surface of said light emitting diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
-
-
9. A light emitting diode (LED) comprising:
-
a base LED structure comprising; a first semiconductor material; a first contact associated with said first semiconductor material; a second semiconductor material; a continuous, reflective second contact layer in direct contact with said second semiconductor material; and an active region interposed between said first and second semiconductor materials; a confinement structure comprising an insulating material disposed in said continuous, reflective second contact layer, the confinement structure being completely surrounded by said continuous, reflective second contact layer and reducing current flow around an area of said active region that is generally axially aligned with said first contact; and a roughened surface of said LED. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
-
-
20. A light emitting diode (LED) comprising:
-
a base LED structure comprising; a first semiconductor material; a first contact associated with said first semiconductor material; a second semiconductor material; a continuous, metal second contact layer associated with said second semiconductor material; and an active region interposed between said first and second semiconductor materials; a confinement structure disposed in said continuous, metal second contact layer and being completely surrounded by said continuous, metal second contact layer, such that current flows around an area of said active region that is generally axially aligned with said first contact, reducing the radiative recombination in said area; a transparent conductive material different from said first and second semiconductor materials on said first material and said first contact; and a roughened surface of said light emitting diode. - View Dependent Claims (21, 22, 23, 24)
-
-
25. A light emitting diode (LED) comprising:
-
a base LED structure comprising; a first semiconductor material comprising a primary light emitting surface; a first contact associated with said first semiconductor material; a second semiconductor material; and an active region interposed between said first and second semiconductor materials; a confinement structure disposed directly on said second semiconductor material such that current flows around an area of said active region that is generally axially aligned with said first contact, reducing the radiative recombination in said area; a continuous, reflective layer disposed directly on said second semiconductor material and completely surrounding said confinement structure; and a roughened surface of said light emitting diode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37)
-
Specification